Papers by Keyword: Screw Dislocation

Abstract: 4H-SiC homo-epitaxial film was grown by adding HCl gas with a high Cl/Si ratio in CVD process, and defect formation and origin of the defect were investigated by confocal differential interference contrast (CDIC) microscope, PL imaging and normal differential interference contrast (DIC) microscope. It was found that a large number of large bumps are formed on the film grown at a high Cl/Si ratio of 30, and a large number of PL defects on bare substrate before the film growth are also observed. Coordinates where the bumps on the film are observed were good agreement with those where the PL defects on the bare substrate are observed. An etch pit sample on reproduced substrate from which epitaxial film was removed was fabricated by etching process using molten KOH+Na₂O₂, and some types of etch pits which might be originated from threading edge dislocations (TEDs), threading screw dislocations (TSDs) and basal plane dislocations (BPDs) in the substrate were observed. The coordinates where the etch pits on the reproduced substrate are observed were also good agreement with those where the bumps on the epitaxial film are observed. Therefore, it was clarified that a large number of the bumps abnormally grown on the epitaxial film are originated from the dislocations in the substrate.

Abstract: In this work the behaviour of edge 1/2<111>{110} and screw 1/2<111>{112} dislocations were investigated by the method of molecular dynamics. The results of calculations show that molecular dynamics with used interatimic potential are able to properly describe the dislocation behavior. Two regimes of dislocation movement in molybdenum are shown to exist: thermo-activated and viscous regimes. Obtained results of dislocation mobility was fitted using the dislocation mobility law.

Abstract: The Peierls stress and barrier of a screw dislocation in body-centered cubic iron at finite temperature is investigated by using the free energy gradient method. The Peierls barrier is shown to decrease from 12 to 5 meV per unit length of the Burgers vector with increasing temperature from 0 to 400 K. The entropy term of the Peierls barrier is estimated to be 0.2k_B. The Peierls stress also decreases from 900 to 400 MPa with increasing temperature from 0 to 300 K. The change in the Peierls stress due to the entropic effect is larger than that of the Peierls barrier because of thermal softening.

Abstract: In this paper we present bond-order potentials (BOPs) based on the tight-binding method. The potentials have been developed for bcc non-magnetic metals of group V.B (V, Nb, Ta) and group VI.B (Cr, Mo, W) as well as for the ferromagnetic bcc iron. The testing of the transferability of BOPs involves energies of alternate structures, formation energies of vacancies and self-interstitials, transformation paths between different structures and phonon dispersion relations. An example of the application of these potentials is modeling of the structure and glide of 1⁄2<111> screw dislocations under the effect of applied shear and tensile/compressive stresses.

Abstract: Crystallographic slip is one of key mechanisms determining plastic form change of crystalline solids. Despite a large amount of works done on the subject, crystallographic slip is a very difficult subject to study. Significant progress in the study of the crystallographic slip process is possible only with the use of a set of different methods: experimental methods, methods of mathematical modeling and simulation. The paper presents a modification mathematical expansion model of closed dislocations emitted by one dislocation source with takes into account the elastic interaction force among all dislocations of the forming dislocation pile-up. The model takes into account the Peach-Koehler forces, lattice, impurity, and dislocation friction, linear tension, viscous deceleration, and the intensity of generation of point defects beyond jogs on the dislocation, as well as the elastic interaction force among all dislocations of the forming dislocation pile-up. The analysis of the study results on the expansion dynamics of the dislocation loop along the screw orientation on copper and aluminum with varying of the dislocation density from 3×10¹¹ m⁻² to 10¹² m⁻² is carried out. It is established that the length and the path time of the screw dislocation, as well as the number of dislocations emitted by the dislocation source, essentially depend on the density of dislocations. The dependence of the current radius, velocity, and kinetic energy of the screw dislocation on the path time and the dependence of the current velocity and the kinetic energy of the first screw dislocation emitted by the dislocation source on its current radius are described.

Abstract: The problem of a piezoelectric screw dislocation emitted from a blunt crack is dealt with in this paper. For an arbitrary distribution of the residual dislocation, the series-form solutions are derived. The results show that the force acting on the dislocation decreases with the value of the dielectric constant within the crack increasing. And the increase of the dielectric constant within the crack helps dislocation emission effectively.

Abstract: Solution of a crack interacting with a tri-material under a remote shear load for anti-plane elasticity problem is considered in this paper. The main purpose of this work is to study the interaction between a crack and a tri-material for anti-plane elasticity problem. This can be achieved by determination of the stress intensity factors that allow the characterization of this interaction from the point of view of linear elastic fracture mechanics. The proposed method is based on complex variable solution of a screw dislocation together with logarithmic singular integral equations. The singular integral equation is then solved numerically by modeling a crack in place of several segments. Some numerical results are performed to show the effects of material property combinations and geometric parameters on the normalized mode-III stress intensity factors. The results show that the stiffer materials may always give retardation effect on stress intensity factors when a crack approaching interfaces. On the other hand, the softer materials may always give enhancement effect on stress intensity factors.

Abstract: In this paper, we present the formation of extended epitaxial defects, such as carrot defects, from threading screw dislocations (TSDs) with a morphological feature at the surface of the substrates. It was confirmed using highly sensitive surface observation, atomic force microscopy (AFM) and KOH etching that the surface roughness around a TSD was observed as the morphological feature and TSDs with such a morphological feature formed extended epitaxial defects with high frequency of appearance compared to usual TSDs without any features. The density of TSDs with such morphological feature depended on the polishing methods. Furthermore, we observed that the formation and shapes of extended defects from TSDs with such morphological feature were affected by step-bunching at the surface of the epilayers.

Abstract: The paper is aim to investigate the interaction of a screw dislocation in strained reinforcement with a lip-shaped crack under remote longitudinal shear load using complex variable method of Elasticity. The exact solution of complex function of the matrix and the renforcement layer are obtain in series form; then, the expressions of stress field, image force and stress intensity factor of crack tip can be derived; finally, numerical disccusions are pesented and the results shows that the lip-shaped crack in reinforcement layer has interference effect on the interaction of dislocation and reinforcement layer, and the eigenstrain in x-direction has little effect on image force; however, the eigenstrain in y-direction has great influence on image force.

Abstract: Solution growth is considered to be a powerful method for high quality SiC crystals. This work reports that the conversion process from a threading screw dislocation into a few Frank partial dislocations in basal planes was investigated by synchrotron X-ray topography. This process was effectively assisted by step-flow growth on off-oriented (0001) seed crystals. The Frank partials were not extended into the crystal grown toward the [0001] direction perpendicular to the basal plane. Thus, the conclusion of this study suggests the use of off-oriented seed crystal is important to improve crystal quality.