HOME CONTACT My eBook

Username: Password:

> @scientific.net

Articles by keyword: «Screw Dislocations»

• 4H-SiC Power Schottky Diodes. On the Way to Solve the Size Limiting Issues
  Published in: Silicon Carbide and Related Materials 2003 (p985)
• Characterization of SiC using Synchrotron White Beam X-ray Topography
  Published in: Silicon Carbide and Related Materials - 1999 (p431)
• Correlation of EBIC and SWBXT Imaged Defects and Epilayer Growth Pits in 6H-SiC Schottky Diodes
  Published in: Silicon Carbide and Related Materials - 1999 (p489)
• Deformation, Recrystallization and Premelting in Bicrystals
  Published in: Grain Growth in Polycrystalline Materials II (p379)
• Electrical Impact of SiC Structural Crystal Defects on High Electric Field Devices
  Published in: Silicon Carbide and Related Materials - 1999 (p1161)
• Fundamentals of Mode III Fracture: A Discrete Dislocation Simulation Approach
  Published in: Fracture and Strength of Solids III (p135)
• Internal Vibrations of Cores of Screw Dislocations in B.C.C. Metals
  Published in: Dislocations '93 (p533)
• Kink Pair Formation Process on Screw Dislocations in BCC Metals
  Published in: Defect and Diffusion Forum Vols. 119-120 (p111)
• Mechanisms of Dislocation Network Formation in Si(001) Hydrophilic Bonded Wafers
  Published in: Gettering and Defect Engineering in Semiconductor Technology XIV (p253)
• Nucleation of Dislocations during Physical Vapor Transport Growth of Silicon Carbide
  Published in: Silicon Carbide and Related Materials - 1999 (p63)
• Polytype Identification and Mapping in Heteroepitaxial Growth of 3C on Atomically Flat 4H-SiC Mesas Using Synchrotron White-Beam X-Ray Topography
  Published in: Silicon Carbide and Related Materials 2001 (p391)
• Replication of Defects from 4H-SiC Wafer to Epitaxial Layer
  Published in: Silicon Carbide and Related Materials 2001 (p447)
• Step Free Surface Heteroepitaxy of 3C-SiC Layers on Patterned 4H/6H-SiC Mesas and Cantilevers
  Published in: Silicon Carbide and Related Materials 2003 (p169)
• Structural and Electrical Study of 4H-SiC CVD-Grown Layer with Micropipe Dissociation
  Published in: Defects and Diffusion in Ceramics (p111)
• Structural Investigation on the Nature of Surface Defects Present in Silicon Carbide Wafers Containing Varying Amount of Micropipes
  Published in: Silicon Carbide and Related Materials - 1999 (p453)