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Papers by Keyword: Screw Dislocations

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Detection of Crystal Defects in High Doped Epitaxial Layers and Substrates by Photoluminescence

Authors: Hrishikesh Das, Swapna Sunkari, Hans Naas, Martin Domeij, Andrei Konstantinov, Fredrik Allerstam, Thomas Neyer

Abstract: In this work, the detection and characterization of various crystal defects in high doped silicon carbide by photoluminescence (PL) is explored. The detection of basal plane dislocations in high doped epitaxial buffer layers is demonstrated using the near ultraviolet (NUV) spectra. Several characteristic defects in high doped 150mm substrates like grain boundaries and screw dislocations are also detected and characterized using the NUV PL spectra. Further characterization using molten potassium hydroxide etching is presented.

222

Mechanisms of Dislocation Network Formation in Si(001) Hydrophilic Bonded Wafers

Authors: Vladimir Vdovin, Oleg Vyvenko, Evgenii Ubyivovk, Oleg Kononchuk

Abstract: Structures of Si(001) hydrofillic bonded wafers have been studied by transmission electron microscopy. Model of three-fold nods generation during interaction of intersecting mixed and screw dislocations has been suggested and applied to analyze geometrical features of dislocation networks. Possible mechanisms of dislocation generation at the interface between Si bonded wafers are discussed.

253

4H-SiC Power Schottky Diodes. On the Way to Solve the Size Limiting Issues

Authors: Alexander Syrkin, Vladimir Dmitriev, V. Soukhoveev, Marina G. Mynbaeva, Roumen Kakanakov, Christer Hallin, Erik Janzén

985

Step Free Surface Heteroepitaxy of 3C-SiC Layers on Patterned 4H/6H-SiC Mesas and Cantilevers

Authors: Philip G. Neudeck, J. Anthony Powell, Andrew J. Trunek, David J. Spry

169

Structural and Electrical Study of 4H-SiC CVD-Grown Layer with Micropipe Dissociation

Authors: Isaho Kamata, Hidekazu Tsuchida, Tamotsu Jikimoto, Kunikaza Izumi

111

Replication of Defects from 4H-SiC Wafer to Epitaxial Layer

Authors: Toshiyuki Ohno, Hirotaka Yamaguchi, Kazutoshi Kojima, Johji Nishio, Koh Masahara, Yuuki Ishida, Tetsuo Takahashi, Takaya Suzuki, Sadafumi Yoshida

447

Polytype Identification and Mapping in Heteroepitaxial Growth of 3C on Atomically Flat 4H-SiC Mesas Using Synchrotron White-Beam X-Ray Topography

Authors: Michael Dudley, William M. Vetter, X. Huang, Philip G. Neudeck, J. Anthony Powell

391

Correlation of EBIC and SWBXT Imaged Defects and Epilayer Growth Pits in 6H-SiC Schottky Diodes

Authors: C.M. Schnabel, M. Tabib-Azar, Philip G. Neudeck, S.G. Bailey, H.B. Su, Michael Dudley, R.P. Raffaelle

489

Characterization of SiC using Synchrotron White Beam X-ray Topography

Authors: Michael Dudley, X. Huang

431

Nucleation of Dislocations during Physical Vapor Transport Growth of Silicon Carbide

Authors: Edward M. Sanchez, V.D. Heydemann, David Snyder, Gregory S. Rohrer, Marek Skowronski