Papers by Keyword: Semiconductor Nanowires

Abstract: One-dimensional nanowires (NWs) have attracted considerable attention in recent years because of their novel physical properties and potential applications as interconnects in nanometre-scale electronics. NWs have potential applications in nanoscale electronics, optoelectronics, photonics, sensors, and solar cells due to their unique electrical, chemical, and optical properties. Several chemical and physical methods are commonly used to produce NWs. Among them, electrochemical synthesis and vapour-liquid-solid (VLS) methods to produce NWs have become popular among scientific workers due to a number of advantages. Synthesis of NWs using anodic alumina and polymer templates in an electrochemical cell has been described in detail as investigated in our laboratory. Characterization of metal and semiconductor NWs has been accomplished using scanning electron microscope (SEM), field emission scanning electron microscope (FESEM), high resolution transmission microscope (HRTEM), X-ray diffraction (XRD), and energy dispersive X-ray analysis (EDAX). Morphology of NWs has been revealed by SEM, structure by TEM, crystallinity by XRD and chemical composition by EDAX. I-V characteristics of copper and semiconductor NWs were recorded in-situ, as grown in pores of anodic alumina template, using Dual Source Meter (Keithley Model 4200 SCS) with platinum probes for contacts. Resonating tunneling diode (RTD) characteristics of fabricated NWs have been investigated. Bulk production of Copper NWs has been described by seed growth technique. Applications of NWs are not covered in any detail under this review. Table of Contents

Abstract: A thermodynamic study describing relative stability of different systems solid and liquid at equilibrium involved in the growth of semiconductor nanowires is reported. A number of stable and metastable phase diagrams, taking into account the size and the shape of condensed phases are calculated for the two binary systems Au-Si and Au-Ge.

Abstract: (Zn,Mn)Te nanowires were grown via vapor-liquid-solid mode as test structures for spintronic applications. The structural and chemical properties of the nanowires were inspected by transmission electron microscopy. The nanowires contain much less stacking faults compared to ZnTe nanowires. This high structural perfection can be attributed to a rough liquid-solid interface as found by high-resolution transmission electron microscopy. The composition of the nanowires and, in particular, the Mn distribution is homogeneous. A ZnO cover layer forms after the growth of the nanowires.