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Articles by keyword: «Sheet Resistance»

• Al and Al/C High Dose Implantation in 4H-SiC
  Published in: Silicon Carbide and Related Materials - 1999 (p885)
• Annealing of Aluminum Implanted 4H-SiC: Comparison of Furnace and Lamp Annealing
  Published in: Silicon Carbide and Related Materials 2004 (p621)
• Comparative Study of Ohmic Contact Metallizations to Nanocrystalline Diamond Films
  Published in: Silicon Carbide and Related Materials 2009 (p733)
• Development and Investigation on EBAS-100 of 100 mm Diameter Wafer for 4H-SiC Post Ion Implantation Annealing
  Published in: Silicon Carbide and Related Materials 2005 (p807)
• Diamond – Graphite Heterostructures Formed by Nitrogen and Hydrogen Implantation and Annealing
  Published in: Nanoscaled Semiconductor-on-Insulator Materials, Sensors and Devices (p27)
• Effect of Ultraviolet Irradiation on Photoelectric Properties of Indium Tin Oxide (ITO) Thin Film Deposited by Sol-Gel Method
  Published in: Advances in Mechanical Design (p1756)
• Effects of Annealing Condition on the Preparation of Indium-Tin Oxide (ITO) Thin Films via Sol-Gel Spin Coating Process
  Published in: Functionally Graded Materials VIII (p325)
• Effects of Annealing Conditions on Resistance Lowering of High-Phosphorus-Implanted 4H-SiC
  Published in: Silicon Carbide and Related Materials 2003 (p901)
• Effects of Different Post-Implantation Annealing Conditions on the Electrical Properties of Interfaces to p-Type Implanted 4H-SiC
  Published in: Silicon Carbide and Related Materials 2011 (p825)
• Effects of Implantation Temperature on Sheet and Contact Resistance of Heavily Al Implanted 4H-SiC
  Published in: Silicon Carbide and Related Materials 2009 (p705)
• Electrical and Optical Characterization of Indium Tin Oxide (ITO) Films for Low Resistance Transparent Electrode
  Published in: Designing, Processing and Properties of Advanced Engineering Materials (p1001)
• Electrical Characteristics of Al⁺ Ion-Implanted 4H-SiC
  Published in: Silicon Carbide and Related Materials 2001 (p803)
• Electrical Properties of N Ion Implanted Layer in 3C-SiC(100) Grown on Self-Standing 3C-SiC Substrate
  Published in: Silicon Carbide and Related Materials 2006 (p579)
• Fabrication of pn-Junction Diode for N⁺ Implanted 4H-SiC(0001) Annealed by EBAS
  Published in: Silicon Carbide and Related Materials 2006 (p929)
• Flat Surface after High-Temperature Annealing for Phosphorus-Ion Implanted 4H-SiC(0001) using Graphite Cap
  Published in: Silicon Carbide and Related Materials 2003 (p933)