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Keyword: "SiC-SiO2 Interface"
Papers by keyword:
Paper Title Page

Characterization of 4H-SiC–SiO2 Interfaces by a Deep Ultraviolet Spectroscopic Ellipsometer

Authors: H. Seki, T. Wakabayashi, Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida

505

Comparison of Inversion Electron Transport Properties of (0001) 4H and 6H-SiC MOSFETs

Authors: Harsh Naik, T. Paul Chow

678

Effects of Initial Nitridation on the Characteristics of SiC-SiO2 Interfaces

Authors: K.Y. Cheong, Sima Dimitrijev, Ji Sheng Han

583

Study of Mobility Limiting Mechanisms in (0001) 4H and 6H-SiC MOSFETs

Authors: Harsh Naik, T. Paul Chow

595

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