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Papers by Keyword: SiC Bulk Crystal Growth

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Application of 3-D X-Ray Computed Tomography for the In Situ Visualization of the SiC Crystal Growth Interface during PVT Bulk Growth

Authors: Georg Neubauer, Michael Salamon, Florian Roider, Norman Uhlmann, Peter J. Wellmann

Abstract: In this paper, we present for the first time an in-situ 3-D reconstruction of the SiC crystal growth interface using X-ray computed tomography (CT). We show that the shape of the growth interface can be determined with high precision at growth temperatures above 2100 °C in a conventional 3” PVT (physical vapor transport) growth system.

Characterization of Inclusions in SiC Bulk Crystals Grown by Modified Lely Method

Authors: Fusao Hirose, Yasuo Kitou, Naoki Oyanagi, Tomohisa Kato, Shin Ichi Nishizawa, Kazuo Arai