Papers by Keyword: SiC Powder

Abstract: By using a NAURA Advanced Physical Vapor Transport (PVT) System, the character ofthe synthesized SiC powder were studied. Mainly from the aspects of purity and particle size, and relevant experiments were designed to understand the influence of the powder source on the synthesized SiC powder. The results showed that the selection of Si powder source with appropriate particle size was conducive to increase the proportion of large particle size of SiC powder. In addition, the purification of material source in the early stage of the process was beneficial to improve the purity of SiC powder. The results showed successful preparation of optimized SiC powder and thus high-quality SiC wafers were made.

Abstract: Two kinds of SiC powder having a different impurity contents and particle size were prepared by carbothermal reduction under different conditions from traditional process for controlling the purity of product. SiC single crystal was grown in the RF heating PVT machine at the temperature above 2,100 °C. After crystal growth, boule was cut to wafers in 1mm thickness and fine polished using diamond abrasive slurry. The impurity in the powder and wafer was analyzed using glow discharged mass spectroscopy (GDMS). Major impurities in the SiC wafer were aluminum, boron, iron and titanium which were accorded in the SiC powder and these impurities were decreasing in proportional to those in the powder. However, behavior of each elemental impurity was different from each other during the crystal growth. In case of boron was increased after crystal growth while aluminum decreased. In case of titanium and boron were higher in the wafer than in the powder. It can be explained to other impurity source such as graphite crucible and insulation felt.

Abstract: Characterization of silicon kerf from photovoltaic silicon-wafer production was carried out. Also, SiC powder was synthesized using high purity silicon kerf by varying grinding conditions. With increase of grinding time, surface of the silicon was oxidized to form silicon oxide. Also, it was observed that the unreacted silicon oxide and free silicon amount in the SiC powder increases with an increasing grinding times, even though silicon particle size of the starting material is decreased.

Abstract: β-SiC powder was synthesized directly from silicon sludge with carbon black. Large amount of silicon sludge is generated from Solar Cell industry. In an environmental and economic point of view, recycling silicon sludge is important. In this study, two kinds of silicon sludge were characterized using XRD, SEM/EDS and FT-IR. SiC powder was synthesized by the reaction of ball-milled silicon powder for 3h in vacuum at different temperatures (1350 and 1600). Physical properties of the heat treated SiC have been characterized using a SEM, XRD, Particle size analyzer and FT-IR Spectroscopy.

Abstract: β-SiC powder was synthesized using silicon sludge from photovoltaic silicon-wafer production by varying heat treatment temperature and carbon contents. The synthesized β-SiC powder and silicon sludge was analyzed by XRD, SEM, FT-IR and Particle size analysis. It is known that the conversion of SiC from the mixture of Silicon and Carbon is mainly affected by the mole ratio of C/Si and heat treatment temperature. In this study, the influence of reaction temperature and carbon contents on the synthesis of β-SiC from silicon sludge was examined.

Abstract: Silicon carbide (SiC) powders have been prepared at 1200–1500°C by carbothermal reduction of two kind precursors of carbonl/silica mixtures: coked rice husk with high-carbon content, and gasified rice husk with low-carbon content mixed with carbon powders as an external carbon sources. The differences in nature of carbon matter in the external source and coked rice husk, and their effect on SiC synthesis have been studied by TG-DSC, TEM, XRD and laser diffraction technique. Experimental results show that the difference in nature of carbon source may affect the formation of SiC powders. The characteristics of the synthesized SiC particles strongly depend on the characteristics of the carbon sources.

Abstract: Three dimensional carbon fiber reinforced silicon oxycarbide (3D Cf/Si-O-C) composites with low cost silicon resin as precursors and 3D Cf as reinforcement. Effects of adding SiC powder (SiCP) on the microstructure, mechanical properties and anti-oxidation properties of 3D Cf/Si-O-C composites were investigated. The results showed that adding SiCP filler could reduce the porosity and improve the interface bonding, therefore the properties of composites increased. But when the SiCP content was excessive, it was difficult to dense the matrix of composites at the further cycles and pores existed in the matrix. As a result, the mechanical properties of the composites decreased. It was found that when fabricated with 18.2 weight percent SiCP the composites exhibited highest mechanical properties, and the flexural strength and fracture toughness reached 421.3MPa and 13.0 MPa•m1/2, respectively. And the anti-oxidation properties were improved with the increase of the SiCP content. When fabricated with 25.0 weight percent SiCP the composites exhibited best oxidation resistance properties, and the composites retained 89.5% of original flexural strength.

Abstract: The ultra-fine treatment of industrial SiC powder was carried out by fluidized bed opposed jet milling (QLM-100K), and the influences of grinding parameters on the ultra-fine treatment were studied. A better grinding result is achieved through a higher crushing pressure and a higher sorter frequency and the ultra-fine treated SiC powder possesses a smaller particle size, a narrower particle-size distribution, a higher specific surface area and reduced agglomeration. The effects of ultra-fine treatment on the compaction behaviors, sintering behaviors, properties and microstructure of SiC ceramics were investigated. The compact with ultra-fine treated powder has a higher density and a lower sintering temperature. The densification and mechanical properties of the ceramics can be ameliorated obviously and the microstructure defects of the ceramics decrease.