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Articles by keyword: «SiO₂/SiC Interface»

• Characterization of the Interfaces between SiC and Oxide Films by Spectroscopic Ellipsometry
  Published in: Silicon Carbide and Related Materials 2001 (p1029)
• Dynamical Simulation of SiO₂/4H-SiC Interface on C-Face Oxidation Process: From First Principles
  Published in: Silicon Carbide and Related Materials 2007 (p591)
• Dynamical Simulation of SiO₂/4H-SiC(0001) Interface Oxidation Process: from First-Principles
  Published in: Silicon Carbide and Related Materials 2006 (p615)
• Effect of Post-Metal Annealing on the Quality of Thermally Grown Silicon Dioxide on 6H- and 4H-SiC
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p849)
• Impact of Interface Defect Passivation on Conduction Band Offset at SiO₂/4H-SiC Interface
  Published in: Silicon Carbide and Related Materials 2011 (p721)
• Improvement of SiO₂/α-SiC Interface Properties by Nitrogen Radical Treatment
  Published in: Silicon Carbide and Related Materials 2001 (p997)
• Influence of Boron and Fluorine Incorporation on the Network Structure of Ultrathin SiO₂
  Published in: Ultra Clean Processing of Silicon Surfaces V (p149)
• Interface Properties of 4H-SiC MOS Structures Studied by a Slow Positron Beam
  Published in: Positron Annihilation - ICPA-13 (p144)
• Interface States in Abrupt SiO₂/4H- and 6HSiC(0001) from First-Principles: Effects of Si Dangling Bonds, C Dangling Bonds and C Clusters
  Published in: Silicon Carbide and Related Materials 2003 (p1297)
• Interface States in SiO₂/4H-SiC(0001) Interfaces from First-Principles: Effects of Si-Si Bonds and of Nitrogen Atom Termination
  Published in: Silicon Carbide and Related Materials 2004 (p573)
• Investigation of SiO₂/SiC Interface using Positron Annihilation Technique
  Published in: Silicon Carbide and Related Materials 2003 (p1301)
• Nitrogen and Hydrogen Induced Trap Passivation at the SiO₂/4H-SiC Interface
  Published in: Silicon Carbide and Related Materials 2005 (p949)
• Observation of SiO₂/SiC Interface with Different Off-Angle from Si(0001) Face Using Transmission Electron Microscopy
  Published in: Silicon Carbide and Related Materials 2000 (p647)
• Silicate Monolayers on the Hexagonal Surfaces of 4H- and 6H-SiC
  Published in: Silicon Carbide and Related Materials - 1999 (p383)
• SiO₂/SiC Interfacial Region: Presence of Silicon Oxycarbides and Effects of Hydrogen Peroxide and Water Vapor Thermal Treatments
  Published in: Silicon Carbide and Related Materials 2011 (p747)