Papers by Keyword: Silicide Formation

Abstract: Thermodynamic and diffusion models are given to describe morphological evolution of the reaction zone during diffusion-limited interaction between non-oxide Si-containing ceramics (SiC and Si₃N₄) and transition metals (Cr, Mo, Ti, Ni, Co, Pt). In the case of diffusion-controlled process in the ternary metal-ceramic systems, reaction phenomena can be rationalized using chemical potential diagrams. However, in some cases, a periodic layered morphology is found in the transition zone, which is not fully understood, and it is difficult to predict a priori. Silicide formation in systems based on dense Silicon Nitride and non-nitride forming metals can be explained by assuming a nitrogen pressure build-up at the contact surface. This pressure determines the chemical potential of Silicon at the interface, and hence, the product phases in the diffusion zone. Traces of Oxygen in the ambient atmosphere might affect the interaction in non-oxide ceramic/transition metal systems. The thermodynamic stability of the condensed phases in the systems where volatile species may form can be interpreted using predominant area-type diagrams.

Abstract: Solid state reactions between amorpous Si and crystalline Co have been investigated by synchrotron radiation at Bessy (Berlin, Germany). The multilayered samples (with 10 periods of a-Si(15 nm)/Co(15 nm) layers) were produced by magnetron sputtering and isothermally heat treated at temperatures between 523 and 593 K. From the time evolution of the XRD spectra first the growth rate of the CoSi phase as well as the decay rate of the Co layer we determined (at 523 and 543 K). The kinetics were described by a power law; tk, and for the growth of CoSi k=0.65 while for the loss of the Co the k=0.77 was obtained, respectively. At higher temperatures (at 573 and 593 K) the formation and growth of the Co2Si layer, at the expense of the Co and already existing CoSi layers, was observed with exponents of about 1 for all the above kinetics. These results, together with the results of resistance kinetics measurements, in similar multilayered as well as bi-layered samples at similar temperatures, providing similar exponents will be presented. Possibility of the interface reaction control and/or the effect of the diffusion asymmetry (which was recently published for the interpretation of solid state reactions with non-parabolic kinetics on the nanoscale) will be discussed.