| Paper Title | Page |
|---|---|
|
Microstructural and Electrical Properties of NiSi2 Precipitates at Dislocations in Silicon Authors: Michael Seibt, Vitaly V. Kveder |
447 |
|
"New Donors" in Czochralski Grown Silicon Annealed at T≥ 600°C under Compressive Stress Authors: Valentin V. Emtsev, Boris A. Andreev, Gagik A. Oganesyan, D.I. Kryzhkov, Andrzej Misiuk, Charalamos A. Londos, M.S. Potsidi |
181 |
|
In Situ Observation of Oxygen Precipitation in Silicon with High Energy X-Rays Authors: Hannes Grillenberger, Andreas Magerl |
437 |
|
In Situ Observation of the Oxygen Nucleation in Silicon with X-Ray Single Crystal Diffraction Authors: Johannes Will, Alexander Gröschel, Christoph Bergmann, Andreas Magerl |
353 |
|
Authors: Yusuke Nakashima, Michiyo Honda, Toshiisa Konishi, Minori Mizumoto, Mamoru Aizawa |
183 |
|
1D-ACAR Studies of As-Grown Impurity Centers in Silicon Authors: N.Yu. Arutyunov, V.Yu. Trashchakov |
795 |
|
35 Years of Defects in Semiconductors: What Next? Authors: G.D. Watkins |
9 |
|
A Candidate for Grain Boundary Pipe Diffusion and Intrinsic Electrical Activity in Silicon Authors: O.B.M. Hardouin Duparc, M. Torrent |
221 |
|
Authors: Heidi Nordmark, Alexander G. Ulyashin, John Charles Walmsley, Randi Holmestad |
309 |
|
A Comparison of Dry and Underwater Laser Micromachining of Silicon Substrates Authors: Viboon Tangwarodomnukun, Jun Wang, Philip Mathew |
693 |