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Articles by keyword: «Silicon»

• Microstructural and Electrical Properties of NiSi₂ Precipitates at Dislocations in Silicon
  Published in: Gettering and Defect Engineering in Semiconductor Technology X (p447)
• "New Donors" in Czochralski Grown Silicon Annealed at T≥ 600°C under Compressive Stress
  Published in: Gettering and Defect Engineering in Semiconductor Technology XI (p181)
• In Situ Observation of Oxygen Precipitation in Silicon with High Energy X-Rays
  Published in: Gettering and Defect Engineering in Semiconductor Technology XIII (p437)
• In Situ Observation of the Oxygen Nucleation in Silicon with X-Ray Single Crystal Diffraction
  Published in: Gettering and Defect Engineering in Semiconductor Technology XIV (p353)
• 1D-ACAR Studies of As-Grown Impurity Centers in Silicon
  Published in: Gettering anf Defect Engineering in Semiconductor Technology IX (p795)
• 35 Years of Defects in Semiconductors: What Next?
  Published in: Defects in Semiconductors 17 (p9)
• A Candidate for Grain Boundary Pipe Diffusion and Intrinsic Electrical Activity in Silicon
  Published in: Intergranular and Interphase Boundaries in Materials (p221)
• A Comparative Analysis of Structural Defect Formation in Si⁺ Implanted and then Plasma Hydrogenated and in H⁺ Implanted Crystalline Silicon
  Published in: Gettering and Defect Engineering in Semiconductor Technology XII (p309)
• A Comparison of Dry and Underwater Laser Micromachining of Silicon Substrates
  Published in: Advances in Materials Processing IX (p693)
• A Diffusion of Positrons by an Electric Field in MOS Transistors
  Published in: Positron Annihilation - ICPA-9 (p1475)
• A Direct Method for Density Matrix Calculation: Application to Si Grain Boundaries in the Tight-Binding Scheme
  Published in: Intergranular and Interphase Boundaries in Materials (p105)
• A First Principles Study of Interstitial Si in Diamond
  Published in: Defects in Semiconductors 19 (p781)
• A Metastable Selenium-Related Center in Silicon
  Published in: Defects in Semiconductors 17 (p159)
• A Model for Anharmonic Vibrational Excitation of <111>-Bond-Interstitial Impurities in Si and Ge Crystals
  Published in: Defects in Semiconductors 17 (p1391)
• A New Approach to Study the Damage Induced by Inert Gases Implantation in Silicon
  Published in: Gettering and Defect Engineering in Semiconductor Technology XI (p357)