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Articles by keyword: «Silicon Carbide (SiC)»

• Preparation and Thermoelectric Properties of SiC Matrix Composites Prepared under a Low Sintering Temperature
  Published in: Chinese Ceramics Communications (p333)
• In Situ HRTEM Observations of Spreading Reactive Molten Alloy on Ceramic Substrates
  Published in: 12th INTERNATIONAL CERAMICS CONGRESS PART C (p83)
• In Situ Metal Matrix Composite Surfacing by Laser Surface Alloying
  Published in: Laser and Plasma Applications in Materials Science (p84)
• 1.54 μm Luminescence in Er and Er+O Implanted 6H SiC
  Published in: Defects in Semiconductors 19 (p1545)
• 100 mm 4HN-SiC Wafers with Zero Micropipe Density
  Published in: Silicon Carbide and Related Materials 2007 (p7)
• 12 kV 4H-SiC p-IGBTs with Record Low Specific On-Resistance
  Published in: Silicon Carbide and Related Materials 2007 (p1187)
• 1600 V, 5.1 mΩ●cm² 4H-SiC BJT with a High Current Gain of β=70
  Published in: Silicon Carbide and Related Materials 2007 (p1155)
• 1700V, 20A 4H-SiC DMOSFETs Optimized for High Temperature Operation
  Published in: Silicon Carbide and Related Materials 2010 (p633)
• 2 kV 4H-SiC Junction FETs
  Published in: Silicon Carbide and Related Materials 2001 (p1227)
• 300ºC Silicon Carbide Integrated Circuits
  Published in: Silicon Carbide and Related Materials 2010 (p730)
• 3C-SiC Growth on 6H-SiC (0001) Substrates
  Published in: Silicon Carbide and Related Materials 2001 (p315)
• 3Y-TZP/Si₂N₂O Composite Obtained by Pressureless Sintering
  Published in: Advanced Powder Technology VI (p415)
• 4H-SiC Bipolar Junction Transistors with a Current Gain of 108
  Published in: Silicon Carbide and Related Materials 2007 (p1159)
• 4H-SiC MOSFETs on C(000-,1) Face with Inversion Channel Mobility of 127cm²/Vs
  Published in: Silicon Carbide and Related Materials 2003 (p1417)
• 4H-SiC pn Diode Grown by LPE Method for High-Power Applications
  Published in: Silicon Carbide and Related Materials - 2002 (p867)