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Articles by keyword: «Silicon Carbide (SiC)»

• A Dual-Metal-Trench Schottky Pinch-Rectifier in 4H SiC
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p945)
• A High Voltage (1,750V) and High Current Gain (β=24.8) 4H-SiC Bipolar Junction Transistor using a Thin (12 μm) Drift layer
  Published in: Silicon Carbide and Related Materials 2003 (p1173)
• A High Voltage (1570V) 4H-SiC Bipolar Darlington with Current Gain β>640 and Tested in a Half-Bridge Inverter up to 20A at V_Bus=900V
  Published in: Silicon Carbide and Related Materials 2003 (p1169)
• A Method for an Improvement in the Quality of Diamond Composite Thermostable Material
  Published in: Advanced Powder Technology VII (p844)
• A New 4H-SiC MESFET Utilizing N^- Shielding and Field Plate Techniques Simultaneously
  Published in: Manufacturing Processes and Systems (p1182)
• A New Concept for Manufacturing Sintered Materials with a Three Dimensional Composition Gradient Using a Silicon Carbide - Titanium Carbide Composite
  Published in: Functionally Graded Materials (p65)
• A New Technology with Porous Materials; Progress in the Development of the Diesel Vehicle Business
  Published in: SiAlONs and Non-oxides (p207)
• A Novel Ceramic Thermocouple Used in High-Temperature Measurement
  Published in: New and Advanced Materials (p328)
• A Novel Method for the Preparation of Porous SiC
  Published in: Eco-Materials Processing and Design X (p773)
• A Novel SiC Precursor with High Ceramic Yield: Antimony-Substituted Polysilane (APS)
  Published in: High-Performance Ceramics V (p818)
• A Novel Temperature Induced Gelation Forming Method
  Published in: High-Performance Ceramics V (p669)
• A Photoemission Study of Polar and Non-Polar SiC Surfaces Oxidized in N₂O
  Published in: Silicon Carbide and Related Materials 2003 (p1329)
• A Reduction of Defects in the SiO₂-SiC System Using the SiC Vacuum Field-Effect Transistor (VacFET)
  Published in: Silicon Carbide and Related Materials 2011 (p777)
• A Review on the CMP of SiC and Sapphire Wafers
  Published in: Advances in Abrasive Technology XIII (p429)
• A Shallow Acceptor Complex in 4H-SiC: Al_SiN_CAl_Si
  Published in: Silicon Carbide and Related Materials - 2002 (p523)