Keyword: "Silicon Carbide (SiC)"
Papers by keyword:
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Paper Title Page

1600 V, 5.1 mΩ●cm2 4H-SiC BJT with a High Current Gain of β=70

Authors: Jian Hui Zhang, Petre Alexandrov, Jian H. Zhao

1155

1700V, 20A 4H-SiC DMOSFETs Optimized for High Temperature Operation

Authors: Brett A. Hull, Sei Hyung Ryu, Q. Jon Zhang, Charlotte Jonas, Michael J. O'Loughlin, Robert Callanan, John W. Palmour

633

2 kV 4H-SiC Junction FETs

Authors: Hidekatsu Onose, Atsuo Watanabe, Tomoyuki Someya, Yutaka Kobayashi

1227

213 W 500 Mhz 4H-SiC Static Induction Transistor

Authors: Gang Chen, Peng Wu, Song Bai, Zhe Yang Li, Yun Li, Wei Jiang Ni, Yu Zhu Li

3392

300C Capable Digital Integrated Circuits in SiC Technology

Authors: Amita Patil, Naresh Rao, Vinayak Tilak

1261

300ºC Silicon Carbide Integrated Circuits

Authors: Zachary Stum, Vinayak Tilak, Peter A. Losee, Emad A. Andarawis, Cheng Po Chen

730

3C-SiC Growth on 6H-SiC (0001) Substrates

Authors: Igor Matko, Bernard Chenevier, M. Audier, Roland Madar, M. Diani, L. Simon, L. Kubler, D. Aubel

315

3Y-TZP/Si2N2O Composite Obtained by Pressureless Sintering

Authors: Carlos A. Xavier Santos, Motozo Hayakawa, José Carlos Bressiani

415

4H-SiC Bipolar Junction Transistors with a Current Gain of 108

Authors: Q. Jon Zhang, Charlotte Jonas, Albert A. Burk, Craig Capell, Jonathan Young, Robert Callanan, Anant K. Agarwal, John W. Palmour, Bruce Geil, Charles J. Scozzie

1159

4H-SiC MOSFETs on C(000-,1) Face with Inversion Channel Mobility of 127cm2/Vs

Authors: Kenji Fukuda, Makoto Kato, Junji Senzaki, Kazutoshi Kojima, Takaya Suzuki

1417

Showing 11 to 20 of 1264 Papers
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