Papers by Keyword: Solar Cell Materials

Abstract: This paper reviews the present status and future developments of solar cell materials for photovoltaic (PV) application. The solar cell made from different materials, such as silicon with different structures, cadmium telluride (CdTe), gallium arsenide GaAs), copper indium gallium diselenide (CIGS) and polymers are compared in theoretical ability, energy conversion efficiency, production and maintenance costs as well as environmental effects. Several important strategies to improve energy efficiency, such as anti-reflective coating (ARC), multi-junction concentrator and black silicon technique that improve the light-trapping and absorption properties of solar cells, are discussed. The review results show that the most efficient solar cells achieved 50% energy conversion, whereas silicon-based PV cells can reach 27%. Today the market is dominated by crystalline silicon in multi-crystalline and mono-crystalline forms due to it being the second most abundant element on the earths crust, and its nontoxic and environmental-friendly nature compared with other materials. Development of a new process with low cost, high efficiency and environment-friendly nature to produce solar grade silicon is of significant importance for the PV industry.

Abstract: Cu(In_0.8Al_0.2)(SSe)₂ (CIASSe) absorber layers of thin film solar cell were prepared by selenization of Cu(In_0.8Al_0.2)S₂(CIAS) nanocrystals. The CIAS nanocrystals were synthesized by a new solution-based technique and successfully deposited on Mo-coated glass substrates in a one-step process. The phase structure, optical and electrical properties of CIASSe thin films were characterized by power X-ray diffraction (XRD), ultraviolet-visible (UV-Vis) spectrophotometer and the Hall Effect Measurement system. The results showed that single-phase CIASSe solid solution was successfully obtained for a selenization temperature of above 400oC. And the diffraction peaks shifted to the lower angle with an increase in selenization time and selenization temperature. The films selenized at 500oC were found to be p-type and the resistivity was only 0.9484×10^-4Ω cm. The optical band gap of the films is 1.508eV and the optical absorption coefficient is over 10⁴cm^-1.

Abstract: Tin sulphide (SnS) thin films have been deposited on glass substrate by chemical bath deposition. The precursor solution was prepared from tin (II) chloride dihydrate, thioacetamide. Triethanolamine, ammonia and ammonium chloride were used as complexant, solvent and buffer solution, respectively. The crystallographic structure, morphology and optical properties were characterized by X-ray diffraction (XRD), scanning electron microscopy and UV-Vis spectrophotometer. XRD analysis shows that SnS thin films were polycrystalline and had orthorhombic structure, and SEM micrographs reveal that SnS thin films were densely packed surface coverage and consists of large flowerlike grains. SnS thin films with the optical bandgap of 1.3 eV were achieved at 300 °C.