Papers by Keyword: Solid Phase Epitaxial Regrowth (SPER)

Abstract: This work presents a summary on the use of rapid thermal processing for implant annealing. It gives a short historical overview of rapid thermal processing systems and the first implant anneal processes on these newly developed tools. We then looked in detail on the soak anneal and spike anneal processes and the influence of certain process parameters. For the soak anneal influences of the ambient, either oxidizing or nitriding, were evaluated. The results of spike anneal processes are influenced by the pre-stabilization temperature, ramp-up and ramp-down rate, peak temperature, and gaseous ambient. The need for shallow, abrupt and highly activated junctions leads to co-implantation of species like fluorine or carbon in conjunction with pre-amorphization. Nowadays, combinations of spike and millisecond annealing as well as millisecond annealing alone are in the focus.

Abstract: The effect of hydrostatic argon pressure equal to 105 Pa and 1.1 GPa applied to processing at up to 1270 K (HT) of Si:Cr samples prepared by Cr+ implantation (dose 1x1015 cm-2, 200 keV) into (001) oriented Czochralski silicon, has been investigated by Secondary Ion Mass Spectrometry, photoluminescence, X-ray and SQUID methods. Cr+ implantation at this energy and dosage produces amorphous silicon (a-Si) near the implanted ions range. Solid phase epitaxial re-growth (SPER) of a-Si takes place at HT. The Cr profile does not depend markedly on HP applied during processing at 723 K. Si:Cr processed at up to 723 K indicates magnetic ordering. Annealing under 105 Pa at 873 K, 1070 K and 1270 K results in a marked diffusion of Cr toward the sample surface. In the case of processing under 1.1 GPa this diffusion is less pronounced, SPER of a-Si is retarded and the a-Si/Si interface becomes enriched with Cr. The Cr concentration in Si:Cr sample processed at 1270 K under 1.1 GPa forms two distinct maxima, the deeper one at 0.35 μm depth.