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Articles by keyword: «Solution Growth»

• Bulk Growth of InGaSb Alloy Semiconductor under Terrestrial Conditions: A Preliminary Study for Microgravity Experiments at ISS
  Published in: Diffusion in Materials - DIMAT 2011 (p539)
• Control of Void Formation in 4H-SiC Solution Growth
  Published in: Silicon Carbide and Related Materials 2011 (p57)
• Conversion Mechanism of Threading Screw Dislocation during SiC Solution Growth
  Published in: Silicon Carbide and Related Materials 2011 (p351)
• Crystalline Quality Evaluation of 6H-SiC Bulk Crystals Grown from Si-Ti-C Ternary Solution
  Published in: Silicon Carbide and Related Materials 2004 (p13)
• Crystallinity Evaluation of 4H-SiC Single Crystal Grown by Solution Growth Technique Using Si-Ti-C Solution
  Published in: Silicon Carbide and Related Materials 2011 (p45)
• Defect Evaluation of SiC Crystal Grown by Solution Method: The Study by Synchrotron X-Ray Topography and Etching Method
  Published in: Silicon Carbide and Related Materials 2010 (p28)
• Effect of Growth Conditions on Cubic Silicon Carbide Crystals Grown from Silicon Solution
  Published in: Silicon Carbide and Related Materials 2006 (p29)
• Effect of Low Frequency Magnetic Field on SiC Solution Growth
  Published in: Silicon Carbide and Related Materials 2010 (p32)
• Growth of 3C SiC Single Crystals from Convection Dominated Melts
  Published in: Silicon Carbide and Related Materials - 1999 (p119)
• Growth of Cubic Silicon Carbide Crystals from Solution
  Published in: Silicon Carbide and Related Materials 2005 (p123)
• Growth of SiC Single Crystal from Si-C-(Co, Fe) Ternary Solution
  Published in: Silicon Carbide and Related Materials 2005 (p115)
• Growth Rate Prediction in SiC Solution Growth Using Silicon as Solvent
  Published in: Silicon Carbide and Related Materials 2011 (p69)
• High SiC Growth Rate Obtained by Vapour-Liquid-Solid Mechanism
  Published in: Silicon Carbide and Related Materials 2006 (p105)
• High Temperature Solution Growth on Free-Standing (001) 3C-SiC Epilayers
  Published in: Silicon Carbide and Related Materials 2008 (p37)
• Large-Scale Numerical Modeling of Continuum Phenomena in Melt and Solution Crystal Growth Processes
  Published in: Theoretical and Technological Aspects of Crystal Growth (p119)