Authors: Masahiro Kubota, Junichi Kaneko, Makoto Sugamata
279
Authors: J.K. Lee, H.J. Kim, Take-Soo Kim, D.M. Lee, Seung Y. Shin, Jung Chan Bae
105
Authors: Lars Hälldahl, Mats Nygren
567
Authors: Dong Choul Cho, Cheol Ho Lim, Ki Tae Kim, Seung Y. Shin, D.M. Lee, Young Sup Lee, C.H. Lee
Abstract: Thermoelectric properties of the spark plasma sintered n-type Bi2Te2.7Se0.3 compounds were characterized with the sintering temperature, time and hydrogen reduction process. The Seebeck coefficient, electrical resistivity and thermal conductivity were dependent on hydrogen reduction process as well as sintering temperature. The Seebeck coefficient and electrical resistivity decreased
and thermal conductivity increased with reduction treatment and sintering temperature. The results suggest that the carrier density varies with the dissolved oxygen and Te vacancies generated during the pulverization process. The highest figure of merit of 3.11×10-3/K was obtained for the compounds spark plasma sintered at 460°C for 16min by using the reduced powders.
654
Authors: Ki Tae Kim, Cheol Ho Lim, Yong Hwan Kim, Dong Choul Cho, Young Sup Lee, C.H. Lee
Abstract: P-type Bi0.5Sb1.5Te3 compounds doped with 3wt.% Te were fabricated by spark plasma sintering after mixing large powders(PL) and small powders(PS). We could obtained the highest figure of merit(Zc) of 2.89×10-3/K in sintered compound mixed to PL:PS=80:20. This resulted from the increase of orientation by large powders(PS) and the reduce of pores by small powders. The figure
of merit(Zc) of the sintered compound using only small powders(PS) showed lower value of 2.67×10-3/K compared with that of sintered compound mixed to PL:PS=80:20 due to the increase of electrical resistivity.
646
Authors: D.M. Lee, Cheol Ho Lim, Dong Choul Cho, Seung Y. Shin, Won Seung Cho
Abstract: N-type Bi2Te3 based thermoelectric compound was prepared by spark plasma sintering with a temperature range of 340~460°C and powder size of ~75㎛, 76~150㎛, 151~250㎛. Thermoelectric properties of the compound were measured as a function of the sintering temperature and powder size. With increasing sintering temperature, the electrical resistivity and thermal conductivity of the compound greatly changed because of the increase in relative density. The Seebeck coefficient and electrical resistivity were varied largely with increasing powder size. Therefore, the compound sintered at 460°C, with the powder of ~75㎛, showed a figure of merit of 2.44 x 10-3/K. Also, the bending strength was 75MPa.
253
Authors: Kyeong Sik Cho, Kwang Soon Lee
Abstract: Rapid densification of the SiC-10, 20, 30, 40wt% TiC powder with Al, B and C additives was carried out by spark plasma sintering (SPS). In the present SPS process, the heating rate and applied pressure were kept at 100°C/min and at 40 MPa, while the sintering temperature varied from 1600-1800°C in an argon atmosphere. The full density of SiC-TiC composites was achieved at a
temperature above 1800°C by spark plasma sintering. The 3C phase of SiC in the composites was transformed to 6H and 4H by increasing the process temperature and the TiC content. By tailoring the microstructure of the spark-plasma-sintered SiC-TiC composites, their toughness could be maintained without a notable reduction in strength. The strength of 720 MPa and the fracture
toughness of 6.3 MPa·m1/2 were obtained in the SiC-40wt% TiC composite prepared at 1800°C for 20 min.
335
Authors: Kyeong Sik Cho, Kwang Soon Lee
Abstract: Densification of the SiC powder without and with additives B+C or Al+B+C was carried out by spark plasma sintering (SPS). The unique features of the process are the possibilities of using a very fast heating rate and a short holding time to obtain fully dense materials. The heating rate and applied pressure were kept at 100°C/ min and 40 MPa, while the sintering temperature and soaking time varied from 1650-1850°C for 10-40 min, respectively. The SPS-sintered specimens with the addition of B+C or Al+B+C at 1850°C reached near-theoretical density. The 3C major
crystalline phase of SiC was transformed to 6H at 1800°C and translated to 4H during prolonged annealing at 1850°C. The strength of 531.0 MPa and the fracture toughness of 3.9 MPa·m1/2 were obtained by the addition of Al+B+C to SiC prepared at 1850°C for 10 min.
329
Authors: Xin Xu, Toshiyuki Nishimura, Naoto Hirosaki, Rong Jun Xie, Yoshinobu Yamamoto
Abstract: The fabrication of dense Si3N4 nano-ceramics via a high-energy mechanical milling
process and subsequent spark plasma sintering (SPS) was reported in this paper. A thermodynamically stable β-Si3N4 powder mixed with 5-mol% Y2O3 and 2-mol% Al2O3 was used as starting powders for high-energy mechanical milling. Milling resulted in the significant decrease of crystalline size and the amorphization of the starting powders. Based on XRD measurements, the amount of the amorphous phase and the grain sizes of the remaining crystalline silicon nitride
depended on the charge ratio. Milled powders could be SPSed at relatively low temperature. A homogenous dense silicon nitride ceramics with grain diameter of about 70 nm could be fabricated through SPS at a low temperature of 1600oC for 5 min. The significant decrease of grain size greatly increased the hardness of obtained ceramics.
166