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Papers by Keyword: Spectral Ellipsometry

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Spectral Ellipsometry of Cobalt-Ions Implanted Silicon Surface

Authors: Valerii V. Bazarov, V.F. Valeev, V.I. Nuzhdin, Yu.N. Osin, G.G. Gumarov, Andrey L. Stepanov

Abstract: Monocrystalline silicon wafers implanted by cobalt ions with energy of 40 keV at a fluence range from 6.6×10¹² to 2.5×10¹⁷ Co⁺-ion/cm² were investigated by optical spectroscopic ellipsometry. By comparison of experimental data with modeling it is shown that the ellipsometric measurements are accurate and reliable method for monitoring of a low-dose ion implantation process.

526

Magneto-Optical Evidence for Intrinsic Ferromagnetism in (Ga,Mn)As Layers Grown by Pulsed Laser Deposition

Authors: Elena A. Gan’shina, L.L. Golik, Z.E. Kun’kova, Vitaly I. Kovalev, Yury V. Markin, Andrey I. Novikov, Georgy S. Zykov, Yury A. Danilov, Alexei V. Kudrin, O.V. Vikhrova, B.N. Zvonkov

Abstract: GaMnAs layers fabricated on GaAs(001) substrates by laser ablation technique were studied using the magneto-optical transversal Kerr effect (TKE) (E = 0.5 - 4.0 eV) and spectral ellipsometry (E = 1.4 - 4.5 eV). Obtained spectral, temperature and magnetic field TKE dependences shown that the used technique allowed us to obtain ferromagnetic (Ga,Mn)As layers, whose composition was close to single-phase one (without MnAs inclusions). Spectral dependences of the off-diagonal components (e’ = e’₁ - ie’₂) of the permittivity tensor and also of the magnetic circular dichroism (MCD) were calculated for ferromagnetic (Ga,Mn)As sample. The calculated dependences were compared with the published magneto-optical spectra of (Ga,Mn)As layers grown by molecular beam epitaxy.

101

Peculiarities in Optical and Magneto-Optical Spectra of GaMnSb Layers Grown by Laser Ablation

Authors: E.A. Gan'shina, L.L. Golik, V.I. Kovalev, Z.E. Kun’kova, M.P. Temiryazeva, Y.A. Danilov, O.V. Vikhrova, B.N. Zvonkov, A.I. Novikov, A.N. Vinogradov

Abstract: Optical and magneto-optical properties of GaMnSb layers fabricated on GaAs (001) substrates by laser ablation technique were studied using spectral ellipsometry (E =1.24-3.25 eV) and the transversal Kerr effect (TKE) (E = 0.5 4.2 eV) as well as atomic and magnetic force microscopy. Spectra of the constituents of the diagonal components of the permittivity tensor as well as TKE depended substantially on the layer fabrication conditions. At room temperature a strong resonant band was observed in the TKE spectra for the GaMnSb layers with low Mn content in the energy range E 0.5-1.5 eV. This resonant TKE band was explained by excitation of surface plasmons in MnSb nanoclusters, which arose during the growth of the layers. In the energy region E >1.5 eV the TKE spectra were related to interband transitions in MnSb inclusions.

562

On Nature of Resonant Transversal Kerr Effect in InMnAs and GaMnAs Layers

Authors: E.A. Gan'shina, L.L. Golik, V.I. Kovalev, Z.E. Kun’kova, M.P. Temiryazeva, Y.A. Danilov, O.V. Vikhrova, B.N. Zvonkov, A.D. Rubacheva, P.N. Tcherbak, A.N. Vinogradov

Abstract: Optical and magneto-optical properties of In(Ga)MnAs layers fabricated by laser ablation on GaAs(100) substrates were studied. Spectra of the optical constants and the transversal Kerr effect (TKE) depended substantially on the conditions of layer fabrication and testified to the presence of MnAs inclusions in all the samples. The cross-sectional transmission electron microscopy revealed the presence in the layers of inclusions 10-40 nm in size. At room temperature, a strong resonant band was observed in the TKE spectra of some In(Ga)MnAs layers in the energy range 0.5-2.7 eV. The resonant character of the TKE spectra was explained by excitation of surface plasmons in the MnAs nanoclusters embedded in the semiconductor host.