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Articles by keyword: «Spectroscopic Ellipsometry (SE)»

• Advanced Real Time Metrology of AlGaN/GaN and InGaN/GaN Epitaxy
  Published in: 5th FORUM ON NEW MATERIALS PART D (p124)
• Application of the Spectroscopic Ellipsometry for the CoSi₂ Silicide Formation Induced by Thermal Annealing of Co/Si Multilayered Films
  Published in: Diffusion in Materials - DIMAT2004 (p572)
• Characterization of 4H-SiC–SiO₂ Interfaces by a Deep Ultraviolet Spectroscopic Ellipsometer
  Published in: Silicon Carbide and Related Materials 2008 (p505)
• Characterization of Oblique Deposited Nanostructured SiO_x Films by Ellipsometric and IR Spectroscopies
  Published in: Nanostructured Materials, Thin Films and Hard Coatings for Advanced Applications (p149)
• Characterization of the Interfaces between SiC and Oxide Films by Spectroscopic Ellipsometry
  Published in: Silicon Carbide and Related Materials 2001 (p1029)
• Effect of Chemical Solution on the Stability of Low-k Films
  Published in: Ultra Clean Processing of Silicon Surfaces VII (p349)
• Effect of Redistribution of the Optical Spectral Weight in CuO Nanostructured Ceramics
  Published in: Trends in Magnetism (p285)
• Effect of UV-Irradiation on Anodized Films Formed on Titanium in 0.1M H₂SO₄ Solution
  Published in: Surface Engineering (p208)
• Effects of Ion Bombardment upon Microcrystalline Silicon Growth
  Published in: Polycrystalline Semiconductors VI (p71)
• Electronic Properties of Wet-Chemically Prepared Oxide Layers
  Published in: Ultra Clean Processing of Silicon Surfaces V (p181)
• Ellipsometric Studies of a-Si:H Film Growth, Density and Microstructure
  Published in: Hydrogenated Amorphous Silicon (p195)
• Ellipsometric Study of Ion-Implantation Damage in Single-Crystal Silicon - An Advanced Optical Model
  Published in: Gettering anf Defect Engineering in Semiconductor Technology IX (p765)
• Highly Crystalline Intrinsic Microcrystalline Silicon Films Using SiF₄/Ar/H₂ Glow Discharge Plasma
  Published in: Polycrystalline Semiconductors VI (p237)
• In Situ Monitoring of the Effect of Ge on the SiC Growth on (111)Si Surfaces
  Published in: Silicon Carbide and Related Materials - 1999 (p281)
• Influence of Thermal Annealing on the Properties of Sputtered Si Rich Silicon Oxide Films
  Published in: Nanostructured Materials, Thin Films and Hard Coatings for Advanced Applications (p101)