Papers by Keyword: Spin Polarized Transport

Abstract: In this paper, we study the value of the tunnel magnetoresistance (TMR) as a function of the applied voltage in double barrier magnetic tunnel junctions (DMTJs) with the left and right ferromagnetic (FM) layers being pinned and numerically estimate the possible difference of the TMR curves for negative and positive voltages in the homojunctions (equal barriers and electrodes). DMTJs are modeled as two single barrier junctions connected in series with consecutive tunneling (CST). We investigated the asymmetric voltage behavior of the TMR for the CST in the range of a general theoretical model. Significant asymmetries of the experimental curves, which arise due to different annealing regimes, are mostly explained by different heights of the tunnel barriers and asymmetries of spin polarizations in magnetic layers.

Abstract: In this paper we have analyzed the possibility of enhancing spin-polarization performance of conventional nonmagnetic semiconductor heterostructures which rely on the resonant tunneling mechanism. Both the bulk inversion asymmetry (BIA) and the structural inversion asymmetry (SIA) effects are taken into account in the presented model. The aim is to engineer nanostructures with maximal degree of spin separation in the electron tunneling current, which might be useful in studying various spin-related phenomena in semiconductor materials. Spin-polarization status of the current, in the devices under consideration, should be controllable by moderate emitter-collector voltages. Additionally, the spin orbit-interactions affect the dwell times of electrons in spin-up and spin-down states, therefore the prospects of spin-filtering in the time domain may be considered as well.

Abstract: We analyze the effect of the geometrical shape and size of the cross section on the spin-polarized transport and the giant magnetoresistance (GMR) by a finite element method, and evaluate the stability and the physical properties of nano-scale spin valves. We calculate the transmission coefficients in the ballistic regime by using a transfer-matrix method, and evaluate the GMR of the current perpendicular to the plane (CPP) by using a circuit theory. The conduction-band structure is simplified to the potential step, which is determined by combining the interfacial parameters calculated by first-principles with the free electron model. The geometrical shapes of the cross section are line and square. As a result, the cross sectional shape has a significant effect on the spin-polarized transport and the GMR. The square-shaped cross section has an advantage of the large GMR, which is contrary to the line-shaped cross section. These phenomena result from the difference of the cut-off energies with the transverse modes and, consequently, the different spin-down transmission coefficients.

Abstract: We have analyzed the spin-filtering effects of the electron current in asymmetric ZnSe/Zn1-xMnxSe multilayer structures, under the influence of both an external magnetic field and a bias voltage. In this type of semiconductor systems, conduction band electrons interact with 3d electrons of the magnetic Mn2+ ions. Because of this sp-d exchange interaction, an external magnetic field modulates the effective potential profile seen by spin-up and spin-down electrons, giving rise to a large Zeeman effect. It is found that the degree of spin polarization changes significantly when the electrical bias is switched from forward to reverse, thus the proposed structure displays obvious behavior of spin-filter diode. This originates from the effective “lifting” of the potential for spin-up electrons, which tunnel through actual potential barriers. Structural parameters optimization, with the goal of maximizing the spin-filtering coefficient, was performed by using simulated annealing algorithm. The described effect may be important for designing new tunable spin-based multifunctional semiconductor devices.