Papers by Keyword: Spintronic

Abstract: Colossal magnetoresistive (CMR) materials have been widely studied because of their huge potential in spintronic technology. An introduction of secondary phase to the manganite matrix is able to improve the low field magnetoresistance (LFMR). This method is favoured by recent research works as it requires a lower magnetic field compared to intrinsic magnetoresistance. Structural, magnetic properties and magnetotransport properties of polycrystalline (1-x) La_0.67Ca_0.33MnO₃ (LCMO): x TiO₂ composites where x = 0.00, 0.05, 0.10, 0.15 and 0.20 were investigated in this work. Polycrystalline La_0.67Ca_0.33MnO₃ (LCMO) was synthesized via sol-gel method and pre-sintered at 800 °C before appending with nano-sized TiO₂. All samples are in LCMO phase having an orthorhombic structure with space group Pnma. The crystal structural parameter is studied by using Rietveld refinement. As TiO₂ content increases, the magnetization is getting higher as observed via vibrating sample magnetometer (VSM) analysis at room temperature. Magnetotransport properties of the pure LCMO sample have been studied from 80 – 220 K. The LFMR is enhanced as the temperature drops. The results have shown LCMO: TiO₂ manganite composite is an excellent candidate for future magnetic sensors and memory devices.

Abstract: We report on the first study of magnetic and structural properties of Co₂Fe_1-xTi_xGa thin films prepared by a magnetron sputtering technique. The presence of well-defined (220) and (422) peaks corresponding to the principal reflection of the Heusler structure were revealed by XRD analysis. Results of magnetic properties measurements of the thin films showed that annealed samples have uniaxial in-plane anisotropy but magnetic properties of as-prepared samples exhibit anisotropy within the plane. The annealed thin films demonstrate complex magnetization process which can be attributed to the difference in the magnetic properties of two coexisting phases with B2 and L2₁ structural ordering.

Abstract: This paper proposes evaluate the effect on doping of 0.4mol of Co in ZnO, Aiming to use in diluted magnetic semiconductor (DMSs), so for this purpose, an evaluation of the characteristics: structural, morphological and magnetic was investigated. The samples were synthesized by combustion reaction using urea as fuel and an electric heater as source of heating. During the synthesis was performed measurements of temperature and time of combustion flame. The samples were characterized by X-ray diffraction (DRX), adsorption of nitrogen (BET), scanning electron microscopy (SEM), particle size distribution and magnetic measurement. The maximum temperature, and reaction time were, 520 oC and 240 s. The data of the XRD showed how phase majority the ZnO, with crystallite size of 27 nm and trace of second phase CoCo₂O₄. Presented superficial area of 33.5 m²/g, with morphology consisting of agglomerates in the form of balls smaller than 5 μm. The sample presented behavior ferrimagnetic with saturation magnetization of 0.32 emu/g, type of a magnetic semiconductor.

Abstract: We performed of Monte Carlo simulations using Ising-like model on two-dimensional core/shell rectangular lattice L×2L for different sizes in order to study the effect of surface and size on the thermal behavior of spin-crossover nanoparticles. The surface effect is accounted for by constraining all the atoms situated in the boundary in the high-spin state as a result of the weak ligand-field prevailing in the coordination shell. This result is similar to square lattice of spin-crossover nanoparticles, and in agreement with experimental data. Such a non-trivial change is explained as due to the competition between the negative pressures induced the high spin state surface and the bulk properties. We also described the way in which the usual occurrence condition of the first-order transition has to be adapted to the nanoscale.

Abstract: In the fields of spintronics, extensive experiments and theoretical studies have been performed to discover materials that are ferromagnetic at room temperature. Many materials have attracted a great interest due to their potential applications in this area and their new physical properties. Our aim in this work is to study the electronic structure of Mn-doped Ge under pressure effect. We used the full-potential linearized augmented plane wave plus the local orbitals method based on the density functional theory within the generalized gradient approximation as parameterized by Perdew. Our calculations were ported on a 2x2x2 Germanium supercell where Ge atom in position (0, 0, 0) was substituted by Mn atom. The theoretical equilibrium lattice parameters are determined. The electronic band structures calculated at equilibrium show the half metallic character of Mn_xGe_1-x. The totat density of states demonstrate the half metallicity under pressure of Mn_xGe_1-x. In addition, the magnetic moment of the super-cell increases under pressure while the magnetic moment of Mn decreases with pressure increasing which is consistent with the available data.Keywords: spintronic, ferromagnetic, hydrostatic pressure, electronic properties, DFT.

Abstract: The influence of Mn/Ga solution on the characteristics of solid composition and microstructure of GaN:Mn thin film was studied. GaN:Mn thin films were deposited on Si (111) substrate by the Chemical Solution Deposition (CSD) method using the spin coating technique. Variations of the Mn/Ga mole fraction were 4%, 6%, 8%, and 10% respectively. The GaN:Mn thin films were then heated at a temperature of 900°C for 2 hours in an N₂ environment with a constant flow rate of 120 sccm. Atomic composition, crystal structure, and surface morphology of GaN:Mn thin films were characterized using X-Ray Diffraction (XRD), Energy Dispersive of X-ray (EDX), and Scanning Electron Microscope (SEM). EDX results showed that the larger the Mn/Ga mole fraction solution, the higher the Mn At percentage is. The correlation of At Mn percentage and Mn/Ga solution mole fraction is represented by the formula y = 0.023x³ - 0.352x² - 1.742x -2.81. All of the GaN:Mn thin films still have nitrogen vacancy, carbon impurity and maintain the wurtzite polycrystalline structure. Lattice parameter a, which is in the range of 3.2077Å – 3.2621Å, and lattice parameter c, which is in the range of 5.1094Å – 5.3038Å, depend on Mn atomic percentage of the film. The Root Mean Square (RMS) of GaN:Mn thin film surface roughness is in the range of 15.3nm – 29.90nm. The grain size for the 6% Mn/Ga mole fraction thin film is homogeneous.

Abstract: The spin-polarized transport is investigated in a magnetic tunnel junction which consists of two ferromagnetic electrodes separated by a magnetic barrier and a nonmagnetic metallic spacer placed in distance above the two dimensional electron gas (2DEG) in presence of an inhomogeneous external modulated magnetic field and a perpendicular wave vector dependent effective potential. Based on the transfer matrix method and the nearly-free-electron approximation the dependence of the conductance and spin polarization on the Fermi energy of the electrons are studied theoretically the. strong oscillations with large amplitude investigated in spin polarization in terms of the Fermi energy due to the inhomogeneous magnetic field. The conductance in terms of the Fermi energy shows no oscillation in low energy but has a strong pick in middle region. this results may be useful for the development of spin electronic devices based on coherent transport, or may be used as a tunable spin-filter.

Abstract: This work investigates the influence of initial compound synthesis prehistory on the phase sequence during formation of single-phase Sr2FeMoO6 (SFMO). Analytical-grade SrCO3, Fe2O3 and MoO3 (sample No.1) and partially reduced precursors of SrFeO3-x (SFO) and SrMoO4-y (SMO) (sample No.2) were used as initial reagents. In the latter case, kinetic limitations of SFMO phase formation are resolved by increasing the diffusivity of both of Fe3+ and Mo5+ and decreasing diffusion lengths to the reaction zone. This enhances the double-perovskite growth rate, lowers synthesis temperature and increases the intensity of X-ray reflections of (011) and (013) planes suggesting a superstructural ordering of Fe3+ and Mo5+ cations. Samples No.1 and No.2 have both a Тс ~ 420K while the magnetization value at 77 K in the sample No.2 is higher by a factor 2.3 compared to that of sample No.1. A decrease of the oxygen vacancy concentration by annealing Sr2FeMoO5.82 lowered magnetization of the samples and promoted the formation of a second magnetic phase with Тс = 700 К. We suppose that an increase of oxygen partial pressure during annealing causes formation of clusters with antiferromagnetic coupling in Fe3+-О2--Fe3+ chains. In order to increase the magnetoresistive effect at temperatures relevant for technical application, weak intergrain bonds should be formed.

Abstract: Based on Mn-doped chalcopyrite ZnSiAs2 the new dilute magnetic semiconductor with p-type conductivity was produced. The Curie temperature behavior of the produced semiconductor is distinctly dependent on the Mn concentration: 325 K for 1 wt.% and 337 K for 2 wt.% of Mn, consequently. Magnetization, electrical resistance, magnetic resistance and Hall effect of mentioned compositions were studied. Temperature dependence of magnetization M(T) have complicate behavior. For T  15 K the M(T) dependence is characteristic for superparamagnetic and at T > 15 K magnetization is sum of magnetizations of ensemble of superparamagnetic clusters and ferromagnetic phase contained frustration regions.

Abstract: Epitaxial Single-crystal ZnO thin films have been grown on c-plane (0001) sapphire by Pulsed Laser Deposition process at different substrate temperatures (300 – 800 °C) with 10-1 mbar oxygen pressure. The thicknesses of the films have been varied by varying number of pulses with a repetition rate of 10 pulse/sec. It is found that the sheet resistivity of ZnO thin films grown on c-plane sapphires are in the order of 10-2 Ω-cm and it increases with increasing substrate temperatures and film thickness. The carrier concentrations and Hall mobility are found to be in the order of 1017 cm-3 and ~195 cm2/V-s, respectively. The Hall mobility slightly decreases with increase of substrate temperature and thickness of the films. It is also found that the ZnO films are structurally uniform and well oriented with perfect wurtzite structure with c/a ratio 5.1. We have also deposited non-epitaxial ZnO films on (100) p-Silicon substrates at the same conditions. From HR FE-SEM micrographs, surface morphology of ZnO films grown at lower substrate temperature are found to be uniform compared to the films grown at higher temperatures showing non-uniformity and misoriented wurtzite structures. However, the surface morphology of ZnO flims grown epitaxially on (0001) sapphire are found to be more uniform and it does not change much with growth temperature. The resistivity of the films grown on p-Silicon at higher temperatures is in the order of 103 Ω-cm whereas films grown at lower substrate temperatures show comparatively lower resistivities (~ 102 Ω-cm). From the recorded UV-Visible absorption spectrum the band gap of the film has been estimated to be 3.38 eV.