| Paper Title | Page |
|---|---|
|
‘Switch-Back Epitaxy’ as a Novel Technique for Reducing Stacking Faults in 3C-SiC Authors: Kuniaki Yagi, Takamitsu Kawahara, Naoki Hatta, Hiroyuki Nagasawa |
291 |
|
Authors: Yoshitaka Umeno, Kuniaki Yagi, Hiroyuki Nagasawa |
415 |
|
4H-SiC Epitaxial Growth on 2° Off-Axis Substrates using Trichlorosilane (TCS) Authors: Takashi Aigo, Wataru Ito, Hiroshi Tsuge, Hirokatsu Yashiro, Masakazu Katsuno, Tatsuo Fujimoto, Wataru Ohashi |
101 |
|
6H-Type Zigzag Faults in Low-Doped 4H-SiC Epitaxial Layers Authors: Teddy Robert, Maya Marinova, Sandrine Juillaguet, Anne Henry, Efstathios K. Polychroniadis, Jean Camassel |
347 |
|
8H Stacking Faults in a 4H-SiC Matrix: Simple Unit Cell or Double 3C Quantum Well? Authors: Teddy Robert, Sandrine Juillaguet, Maya Marinova, Thierry Chassagne, Ioannis Tsiaousis, N. Frangis, Efstathios K. Polychroniadis, Jean Camassel |
339 |
|
A Model for Crack-Induced Nucleation of Dislocations, Complex Stacking Faults and Twins Authors: Glenn E. Beltz, Margherita Chang, Anna Machová |
17 |
|
Absence of Dislocation Motion in 3C-SiC pn Diodes under Forward Bias Authors: Kevin M. Speer, David J. Spry, Andrew J. Trunek, Philip G. Neudeck, M.A. Crimp, J.T. Hile, C. Burda, P. Pirouz |
223 |
|
An Ab Initio Study of Intrinsic Stacking Faults in GaN Authors: Hisaomi Iwata, Sven Öberg, Patrick R. Briddon |
1617 |
|
An ab initio Study of Native Defects in Cubic SiC: Vacancies and Stacking Faults Authors: A. Zywietz, P. Käckell, J. Furthmüller, Friedhelm Bechstedt |
283 |
|
Authors: Syunsuke Izumi, Isaho Kamata, Takeshi Tawara, Hiroyuki Fujisawa, Hidekazu Tsuchida |
1085 |