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CONFERENCE
6/16/2013 - 6/19/2013
The 7th International conference on Physical and Numerical Simulation of Materials Processing
5/16/2013 - 5/19/2013
2nd International Congress on Advanced Materials
4/13/2013 - 4/14/2013
2013 2nd lnternational Conference on lntclligent Materials, Applied Mechanics and Design Science (IMAMD 2013)
more...
Articles by keyword: «
Stacking Fault
»
220 papers on 15 pages:
1
[2]
[3]
...
[15]
[next]
‘Switch-Back Epitaxy’ as a Novel Technique for Reducing Stacking Faults in 3C-SiC
Published in:
Silicon Carbide and Related Materials 2005
(p291)
Ab Initio
Calculation of Mechanical Properties of Stacking Fault in 3C-SiC: Effect of Stress and Doping
Published in:
Silicon Carbide and Related Materials 2011
(p415)
4H-SiC Epitaxial Growth on 2° Off-Axis Substrates using Trichlorosilane (TCS)
Published in:
Silicon Carbide and Related Materials 2011
(p101)
6H-Type Zigzag Faults in Low-Doped 4H-SiC Epitaxial Layers
Published in:
Silicon Carbide and Related Materials 2009
(p347)
8H Stacking Faults in a 4H-SiC Matrix: Simple Unit Cell or Double 3C Quantum Well?
Published in:
Silicon Carbide and Related Materials 2008
(p339)
A Model for Crack-Induced Nucleation of Dislocations, Complex Stacking Faults and Twins
Published in:
Materials Structure & Micromechanics of Fracture
(p17)
Absence of Dislocation Motion in 3C-SiC pn Diodes under Forward Bias
Published in:
Silicon Carbide and Related Materials 2006
(p223)
An Ab Initio Study of Intrinsic Stacking Faults in GaN
Published in:
Silicon Carbide and Related Materials 2003
(p1617)
An ab initio Study of Native Defects in Cubic SiC: Vacancies and Stacking Faults
Published in:
Silicon Carbide, III-Nitrides and Related Materials
(p283)
Analysis of Structural Defects in the 4H-SiC Epilayers and their Influence on the Electrical Properties
Published in:
Silicon Carbide and Related Materials 2003
(p1085)
Analysis of the Interfacial Relationship in GaN/(0001) AI
2
O
3
Layers
Published in:
Intergranular and Interphase Boundaries in Materials
(p111)
Anisotropic Elastic Distortions of a Buried Dissociated Hexagonal Network of Dislocations in a Nickel Based Super Alloys
Published in:
Advances in Materials and Processing Technologies
(p289)
Anisotropic Line Broadening from Stacking Faults in Rietveld Refinement
Published in:
European Powder Diffraction 6
(p28)
Annealing Effect of Cu on the Co Structure in Cu/Co/Cu Sandwiches
Published in:
Intergranular and Interphase Boundaries in Materials
(p697)
Approaches to Stabilizing the Forward Voltage of Bipolar SiC Devices
Published in:
Silicon Carbide and Related Materials 2003
(p1113)
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