| Paper Title | Page |
|---|---|
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Authors: Orest J. Glembocki, Marek Skowronski, S.M. Prokes, D. Kurt Gaskill, Joshua D. Caldwell |
347 |
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On the Luminescence and Driving Force of Stacking Faults in 4H-SiC Authors: Joshua D. Caldwell, A.J. Giles, Robert E. Stahlbush, M.G. Ancona, Orest J. Glembocki, Karl D. Hobart, Brett A. Hull, Kendrick X. Liu |
277 |
|
Authors: Maya Marinova, Efstathios K. Polychroniadis |
99 |
|
On the Stability of 3C-SiC Single Crystals at High Temperatures Authors: Deborah Dompoint, Irina G. Galben-Sandulache, Alexandre Boulle, Didier Chaussende, Dominique Eyidi, Jean Luc Demenet, Marie France Beaufort, Jacques Rabier |
493 |
|
Optical Investigation of Stacking Faults and Micro-Crystalline Inclusions In-Low-Doped 4H-SiC Layers Authors: Sandrine Juillaguet, Carole Balloud, Julien Pernot, C. Sartel, Veronique Soulière, Jean Camassel, Yves Monteil |
577 |
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Origin of the Warpage of 3C-SiC Wafer: Effect of Nonuniform Intrinsic Stress Authors: Yu Sun, Satoshi Izumi, Shinsuke Sakai, Kuniaki Yagi, Hiroyuki Nagasawa |
501 |
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Overlapping Shockley/Frank Faults in 4H-SiC PiN Diodes Authors: Mark E. Twigg, Robert E. Stahlbush, Peter A. Losee, Can Hua Li, I. Bhat, T. Paul Chow |
383 |
|
Oxygen Clusters in As-Grown Cz-Si Crystals Probed by Positron Annihilation Authors: Atsushi Ikari, Kazuto Kawakami, Hiroyo Haga, Akira Uedono, Long Wei, T. Kawano, Shoichiro Tanigawa |
1583 |
|
Pair-Generation of the Basal-Plane-Dislocation during Crystal Growth of SiC Authors: Taro Nishiguchi, Tomoaki Furusho, Toshiyuki Isshiki, Koji Nishio, Hiromu Shiomi, Shigehiro Nishino |
329 |
|
Partial Dislocations and Stacking Faults in 4H-SiC PiN Diodes Authors: Mark E. Twigg, Robert E. Stahlbush, M. Fatemi, Steve Arthur, Jeffery B. Fedison, Jesse B. Tucker, Shao Ping Wang |
537 |
Keyword:
"Stacking Fault"
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