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Articles by keyword: «Step Bunching»

• 4H-SiC Homoepitaxial Growth on Vicinal-Off Angled Si-Face Substrate
  Published in: Silicon Carbide and Related Materials 2009 (p99)
• A Comprehensive Study of Hydrogen Etching on the Major SiC Polytypes and Crystal Orientations
  Published in: Silicon Carbide and Related Materials 2008 (p589)
• A Phase Field Model for the Step Dynamics Including Elastic Interactions between Steps
  Published in: THERMEC'2003 (p3879)
• An Overview of SiC Growth
  Published in: Silicon Carbide and Related Materials - 1999 (p125)
• Characterization of Anisotropic Step-bunching on as-grown SiC Surfaces
  Published in: Silicon Carbide and Related Materials - 1999 (p375)
• Control of the Surface Morphology on Low Off Angled 4H-SiC Homoepitaxal Growth
  Published in: Silicon Carbide and Related Materials 2008 (p113)
• Correlation Study of Morphology, Electrical Activation and Contact formation of Ion Implanted 4H-SiC
  Published in: Gettering and Defect Engineering in Semiconductor Technology XIII (p493)
• Defects Analysis in Strained InAlAs and InGaAs Films Grown on (111)B InP Substrates
  Published in: Defects in Semiconductors 19 (p1211)
• Etching of 4° and 8° 4H-SiC Using Various Hydrogen-Propane Mixtures in a Commercial Hot-Wall CVD Reactor
  Published in: Silicon Carbide and Related Materials 2006 (p513)
• Extended Study of the Step-Bunching Mechanism during the Homoepitaxial Growth of SiC
  Published in: Silicon Carbide and Related Materials 2008 (p117)
• Gaseous Etching for Characterization of Structural Defects in Silicon Carbide Single Crystals
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p421)
• Growth Mode Diagram for the Epitaxial Growth on the Vicinal Surface of Strained Si (001)
  Published in: Advances in Nanomaterials and Processing (p547)
• Growth of 4H-SiC Epitaxial Layers on 4° Off-Axis Si-Face Substrates
  Published in: Silicon Carbide and Related Materials 2008 (p81)
• Improvement of Surface Roughness for 4H-SiC Epilayers Grown on 4° Off-Axis Substrates
  Published in: Silicon Carbide and Related Materials 2009 (p119)
• Influence of C/Si Ratio on the 4H-SiC (0001) Epitaxial Growth and a Keynote for High-Rate Growth
  Published in: Silicon Carbide and Related Materials 2003 (p213)