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Articles by keyword: «Stoichiometry»

• Characterization of Low Pressure Chemical Vapor Deposited Polysilicon Using Ellipsometry
  Published in: Polycrystalline Semiconductors IV (p179)
• Characterization of the Stoichiometric Ratio O/U in UO₂ Samples by Gravimetric and Voltammetric Methods
  Published in: Advanced Powder Technology III (p737)
• Controlled Growth of Bulk 15R-SiC Single Crystals by the Modified Lely Method
  Published in: Silicon Carbide and Related Materials - 1999 (p111)
• Diffusion and Stresses
  Published in: Diffusion and Stresses (p3)
• Effect of Precipitation Method on Stoichiometry and Morphology of Hydroxyapatite Nanoparticles
  Published in: Bioceramics 19 (p271)
• Halide-CVD Growth of Bulk SiC Crystals
  Published in: Silicon Carbide and Related Materials 2005 (p21)
• Influence of Mg and B Stoichiometry on the Formation Behavior of MgB₂ Phase
  Published in: Progress in Light Metals, Aerospace Materials and Superconductors (p2035)
• Internal Friction Measurements in Ni Co Cr Al Y Ta Alloys
  Published in: Internal Friction and Ultrasonic Attenuation in Solids (p401)
• Kinetic Peculiarities of Cd₂₁Ni₅ Intermetallic Growth
  Published in: Diffusion in Materials DIMAT 1996 (p615)
• Magnetic Properties of Non-Stoichiometric RNi₂Mn_x (R = Tb, Dy) Compounds
  Published in: Trends in Magnetism (p200)
• Niobate Complex Perovskite Microwave Dieletric Ceramics Ba(Me_1/3Nb_2/3)O₃ (Me= Zn, Co, Ni and Mg)
  Published in: 11th International Ceramics Congress (p2323)
• On Current Limitations in Porous SiC Applications
  Published in: Silicon Carbide and Related Materials 2004 (p269)
• On the Formation of Unusual Diffusion Profiles in Cd_xZn_1-xTe Crystals after Implantation of Different Elements
  Published in: Diffusion in Materials - DIMAT2008 (p587)
• Point Defects in III-V Compound Semiconductors
  Published in: Defects and Diffusion in Semiconductors (p85)
• Relation Between Photoconductivity and Deposition Conditions of Evaporated CuInSe₂ Polycrystalline Thin Films
  Published in: Polycrystalline Semiconductors V (p391)