Papers by Keyword: Structural-Mechanical Behavior

Abstract: In view of considerable attention in the development of liquid phase sintered SiC, a comprehensive study of the data on processing, structure and properties seems highly relevant. This article provides a detailed and critical overview of liquid phase sintered silicon carbide ceramics with primary emphasis of grain-boundary/secondary phase evolution, their structure, distribution on the final properties of the sintered materials. The roles of individual additives in developing boundary microstructures will be identified and demonstrated to be critical in optimizing the mechanical properties, including fracture toughness, flexural strength and creep resistance. Numerous methods of structure-properties modification, like in-situ-toughening, -SiC phase transformation, volume of liquid phase, partial/full crystallization of grain-boundary and/or secondary phases are conclusively discussed. Apart from conventional pressureless sintering of SiC, enhanced spark plasma sintering with different oxide and non-oxide sintering additives are also discussed in terms of phase evolution, microstructure and their structure mechanical properties are correlated.

Abstract: The most interesting feature in silicon carbide is the structure-property relation where the formation of different types of microstructure due to different structural modifications (polytypism) and grain-boundary/interfacial phase chemistry dictate the final properties of the monoliths. Since synthesis of SiC in last century, several methods such as hot pressing with a sintering aid (B, C), pressureless sintering with a sintering aid (B, C, Al) and reaction bonded (Si-SiC) were used to fabricate dense SiC. A newer method of fast sintering (spark plasma sintering) using pulsed current is also employed to consolidate nano/submicron size SiC with or without additives. The solid state sintered SiC materials have fine-grained equiaxed microstructure (grain size 1 to 4 µm) with thin layer of intergranular phases (amorphous film), exhibit moderate high-temperature creep and oxidation resistance, fracture toughness (3 to 4 MPam1/2) and have highly flaw-sensitive strength at room temperature. The high temperature mechanical properties are highly influenced by the presence of free C, Al and B + C containing grain-boundary phases. Moreover, during prolong processing, abnormal grain growth occurs resulting in anisotropic -SiC phase formation. The Si-SiC materials are poor candidates for high-temperature applications due to the limit set by the melting point of silicon, and the limitations of hot pressing (HPSiC) as a densification technique are well known. SPSed SiC without sintering additive revealed inferior mechanical properties attributed to poor bonding between adjacent grains. In the present survey, an overview of the new developments in silicon carbide processing and properties will be presented together with the information on structure-properties correlationship. Information on the structure of the grain-boundary/secondary phases and interfaces until now was not comprehensively analyzed.