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Articles by keyword: «Structural Defects»

• A Study of Structural Defects in Sputtered ZrN Films
  Published in: Positron Annihilation - ICPA-9 (p913)
• An Ab Initio Study of the Effects and Stability of Vacancies, Antisites and Small Radius Atoms (B, C, N and O) in the B2-FeAl Structure
  Published in: Defects and Diffusion in Metals An Annual Retrospective - VII (p87)
• Are there any Shallow Acceptors in GaN?
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p1327)
• Capacitance Spectroscopy of Deep Centres in SiC
  Published in: Defects in Semiconductors 19 (p715)
• Change of Structural Defects in Amorphous Alloy Fe₇₃Co₅B₁₄Si₈ during Annealing
  Published in: Positron Annihilation - ICPA-10 (p319)
• Changes of Structural Defects of Hydrogenated and Dehydrogenated α-Ti Investigated by Positron Annihilation Technique
  Published in: Positron Annihilation - ICPA-10 (p411)
• Characterisation of 4H-SiC PiN Diodes by Micro-Raman Scattering and Photoemission
  Published in: Silicon Carbide and Related Materials 2004 (p437)
• Coupling between the Raman Spectroscopy and Photoemission Microscopy Techniques: Investigation of Defects in Biased 4H-SiC pin Diodes
  Published in: Silicon Carbide and Related Materials 2006 (p909)
• Defect Formation during Erbium Implantation and Subsequent Annealing of Si:Er
  Published in: Gettering and Defect Engineering in Semiconductor Technology VII (p257)
• Direct Bonding of Silicon Wafers with Grooved Surfaces: Characterization of Defects and Application to High Power Devices
  Published in: Defects in Semiconductors 18 (p1853)
• Excess Carrier Lifetime Mapping for Bulk SiC Wafers by Microwave Photoconductivity Decay Method and Its Relationship with Structural Defect Distribution
  Published in: Silicon Carbide and Related Materials 2003 (p505)
• Excess Carrier Lifetimes in a Bulk p-Type SiC Wafer Measured by the Microwave Photoconductivity Decay Method
  Published in: Silicon Carbide and Related Materials 2006 (p359)
• Influence of Solidification Speed on Quality and Quantity of Structural Defects in Fe₆₁Co₁₀Zr_2.5Hf_2.5Y₂W₂B₂₀ Amorphous Alloy
  Published in: PRICM7 (p1074)
• Influence of Structural Defects on Carrier Lifetime in 4H Epitaxial Layers, Studied by High Resolution Optical Lifetime Mapping
  Published in: Silicon Carbide and Related Materials 2008 (p255)
• Investigation of Structural Defects during 4H-SiC Schottky Diode Processing by Synchrotron Topography
  Published in: Silicon Carbide and Related Materials 2001 (p419)