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Articles by keyword: «Sublimation»

• 6H-SiC Homoepitaxial Growth and Optical Property of Boron- and Nitrogen-Doped Donor-Acceptor Pair (DAP) Emission of 1º-Off Substrate by Closed-Space Sublimation Method
  Published in: Silicon Carbide and Related Materials 2005 (p263)
• A Study of HTCVD Renewing of the SiC Polycrystalline Source during the PVT Process
  Published in: Silicon Carbide and Related Materials - 2002 (p87)
• AlN Crystal Growth by Sublimation Technique
  Published in: Silicon Carbide and Related Materials 2000 (p779)
• An Inserted Epitaxial Layer for SiC Single Crystal Growth by the Physical Vapor Transport Method
  Published in: Silicon Carbide and Related Materials 2006 (p9)
• As-Grown 4H-SiC Epilayers with Magnetic Properties
  Published in: Silicon Carbide and Related Materials 2003 (p747)
• Characterization of 2 Inch SiC Wafers Made by the Sublimation Method
  Published in: Silicon Carbide and Related Materials 2000 (p267)
• CVD SiC Powder for High-Purity SiC Source Material
  Published in: Silicon Carbide and Related Materials 2001 (p155)
• Defect Formation Mechanism of Bulk SiC
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p41)
• Dislocation Constraint by Etch-Back Process of Seed Crystal in SiC Bulk Crystal Growth
  Published in: Silicon Carbide and Related Materials 2001 (p111)
• Effect of the Seed Polarity for High Quality 4H-SiC Crystal Grown on 6H-SiC Seed by PVT Method
  Published in: Silicon Carbide and Related Materials 2010 (p44)
• Elastic Moduli Measurements of SiC Reinforced Alumina at High Temperatures Using Laser-Ultrasonics
  Published in: Nondestructive Characterization of Materials VII (p235)
• Epitaxial Growth of 4H-SiC (0001) by Sublimation Method Using Horizontal Furnace
  Published in: Silicon Carbide and Related Materials 2005 (p267)
• Epitaxy of High Quality SiC Layers by CST
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p155)
• Evaluation of On-State Resistance and Boron-Related Levels in n-Type 4H-SiC
  Published in: Silicon Carbide and Related Materials 2004 (p425)
• Growth of 2 Inches 6H-SiC Single Crystals by Sublimation Method: The Comparison of α- and ß-SiC Powders
  Published in: Silicon Carbide and Related Materials 2004 (p17)