Authors: Dong Gyu Kim, Guy Vereecke, Pallavi Puttarame Gowda, Kurt Wostyn, Tae Gon Kim, Jin Goo Park, Efrain Altamirano-Sanchez
Abstract: The use of SiGe substrate as a semiconductor material is increasing because of its unique properties. In order to manufacture high-performance devices, it is necessary to develop SiGe selective etching technology. In this study, SiGe epi and oxide substrates with varying germanium percentages (15, 25, and 40 %) were used for the investigation of the selective etching process. As the etchant, APM (1:4:20) solutions were used, and added HF and HCl to confirm the pH effect. The evaluation was conducted while adjusting the pH level. In the case of the SiGe epi substrate, the etching rate was very low at high pH, but the etching rate rapidly increased at a specific pH. And then, the etch rate gradually decreased. On the other hand, the etch rates of the oxide substrate rapidly increased as the pH decreased. To explain the etch rate behavior due to the difference in Ge content and type of substrates, the surface chemistry was measured, and the speciation of the solution was analyzed.
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Authors: Steffen Natemeyer, Petra Fischer, Roland Fischer, Markus Valtiner
Abstract: With the increasing use of III-nitride semiconductors, more knowledge is needed about the manufacturing processes and reactions with different chemicals. Gallium nitride semiconductors show a different behavior in wet chemistry compared to the known silicon technologies [4,5]. The different behavior can be explained, among other things, by the polar axis in the c-direction [0001] [6]. Surface characterization is necessary to gain a better understanding of the native surface and after different processes. We have used Low Energy Ion Scattering (LEIS) with its very high sensitivity for surface characterization to characterize the surface of different gallium nitride semiconductors and to establish a depth profile by sputtering [1,8].
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Authors: Dennis H. van Dorp, Graniel Harne A. Abrenica, Mikhail V. Lebedev, Sophia Arnauts, Thomas Mayer, Stefan de Gendt
Abstract: In this atomic-scale study on technologically relevant group IV semiconductors, Ge and SiGe, we relate surface chemistry, in particular the nature of surface oxides, to wet etching kinetics. ICP-MS quantification of Ge in HCl solution containing H2O2 as the oxidizing agent showed that the Si bulk concentration strongly impacted the etching kinetics. Post operando synchrotron XPS provided insight into the surface oxide chemistry involved in the etching process: a non-homogeneous porous layer with a depletion of Ge components at the outer surface due to pull out effects.
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Authors: Dennis H. van Dorp, Sophia Arnauts, Mikko Laitinen, Timo Sajavaara, Johan Meersschaut, Thierry Conard, Frank Holsteyns, John Kelly
Abstract: In this study of nanoscale etching for state-of-the-art device technology the importance of the nature of the surface oxide, is demonstrated for two III-V materials. Etching kinetics for GaAs and InP in acidic solutions of hydrogen peroxide are strikingly different. GaAs etches much faster, while the dependence of the etch rate on the H+ concentration differs markedly for the two semiconductors. Surface analysis techniques provided information on the surface composition after etching: strongly non-stoichiometric porous (hydr)oxides on GaAs and a thin stoichiometric oxide that forms a blocking layer on InP. Reaction schemes are provided that allow one to understand the results, in particular the important difference in etch rate and the contrasting role of chloride in the dissolution of the two semiconductors.
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Authors: Graniel Harne A. Abrenica, Mikhail V. Lebedev, Hy Le, Andreas Hajduk, Mathias Fingerle, Thomas Mayer, Stefan de Gendt, Dennis H. van Dorp
Abstract: We report on the (electro) chemical etching behavior, surface morphology and composition of n-type Ge (100) in acidic halide solutions using various analytical and spectroscopic techniques. The use of an integrated (electro) chemical etching chamber connected to X-ray photoelectron spectroscopy instrument to exclude the effect of oxygen from atmosphere is highlighted.
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Authors: Sina Ghassa, Hadi Abdollahi, Mahdi Gharabaghi, Saeed Chehreh Chelgani, Mohammad Jafari
Abstract: The mineral surface chemistry characterization is essential to describe the dissolution kinetics in leaching and bioleaching. Five different methods, including X-ray diffraction (XRD), Scanning Electron Microscopy (SEM), Energy-Dispersive X-ray Spectroscopy (EDS), Fourier Transform Infrared Spectroscopy (FTIR) and Raman Spectroscopy, have been applied to study the surface chemistry changes during pyrite, sphalerite and molybdenite bioleaching. The surface characterizations have been done for samples before and after biological and chemical leaching. The SEM images illustrated that the minerals surfaces were smooth before processing, while they covered with an ash layer after biological treatment. Although EDS analysis and Raman spectrum demonstrated the potassium jarosite formation on the pyrite surface during bioleaching, the formation of jarosite layer did not occur on the sphalerite surfaces during bioleaching. On the other hand, a sulfur layer formation on the sphalerite surface was confirmed by mentioned characterization methods. Finally, according to the XRD and EDS spectrum the molybdenite surface had been covered both with sulfur and jarosite.
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Authors: Zulfahmi Lukman, Nornizar Anuar, Norazah Abdul Rahman
Abstract: Crystal morphology remains an important aspect in pharmaceutical industries and thus lengthy experimentally determined morphology becomes a routine. This leads to advancement of molecular modeling to assist in crystal morphology determination. Morphology of racemic ibuprofen can be grown in PEG 300 solvent and simulated via molecular modeling, the computational technique. The resulting morphology dictates its feasibility and prepares for further necessary control to produce desired morphology. Tuning up the morphology can be done by rationalizing out via molecular modeling the effect of the solvent and crystallization method. Solvent effect persists to influence crystal morphology mainly via interaction of hydrogen bond specific at different facets. However, the influence of solvent-surface interaction in enhancing or inhibiting crystal growth is still not completely resolved. To date, racemic ibuprofen grown in PEG 300 solvent is the first ever reported. The objective of this study is to compare experimental and predicted morphology of racemic ibuprofen using selected potential functions and charge set in vacuum condition. Racemic ibuprofen crystal morphology was grown in PEG 300 solvent via cooling at ambient temperature and predicted via attachment energy (AE) method using molecular modeling. It was found that the experimental morphology is tabular hexagonal while the predicted one is tabular octagonal. The facets were cleaved and its surface chemistry was explained. The predicted lattice energy with lowest percentage error of 0.02% is dominated by van der Waals force rather than electrostatic force.
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Authors: Hong Yu Gu, Li Xin Song, Jin Lin Zhang, Zhen Yi Qi
Abstract: Topographically rich superhydrophilic surfaces can be generated by UV photo-oxidation of originally flat polyimide. Then stable superhydrophobic PI films can be achieved after fluoroalkylsilane (FAS) modification. Present work describes the changes in surface chemistry during the preparation processes. After UV treatment in air, PI was oxidized accompanied by the generation of OH and amide groups as well as N-O bondings. Moreover, the oxidized polymer tended to aggregate as protrusions, gathering of polar groups such as OH groups. The OH groups could further react with FAS, combining fluoroalkyl chains with irradiated PI through O-Si bondings (silanization). The chemical bindings contributed to the stability of superhydrophobicity.
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Authors: Yakub Ibrahim, Anwar Mohd Said Khairul, Norsuzailina Mohamed Sutan, Yun Hin Taufiq-Yap, Mahmud Surahim
Abstract: Selective Catalytic Reduction catalyst (Cu-Mn/CSC) was derived from coconut shell carbon (CSC). The bimetallic catalysts, Copper and Manganese (Cu-Mn), were deposited onto CSC using wet impregnation technique while the calcination stage was performed under low temperature ambient air. The samples were then characterized using nitrogen adsorption-and-desorption, carbon dioxide temperature-programmed desorption, ammonia temperature-programmed desorption, hydrogen temperature-programmed reduction as well as scanning electron microscopy. The results showed that the synthesis process increased the external surface area and regulated the distribution of slit-shape pores on Cu-Mn/CSC. Besides, Cu-Mn was found to be reduced and the surface has more acidic groups compared to basic. These findings indicated the potential of using CSC as a precursor for NOx-Selective Catalytic Reduction catalyst.
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Authors: Marko Eltermann, Sven Lange, Kathriin Utt, Urmas Joost, Ilmar Kink, Valter Kiisk, Ilmo Sildos
Abstract: Present work investigates the applicability of nanosized TiO2 (anatase) as a potential optical sensor material for ambient oxygen below room temperature. Titania nanopowders with grain sizes of 10 and 40 nm are prepared via the sol-gel route and tested for the gas response in water deficit conditions. Both powders exhibit sensitivity against oxygen. At-50 °C 40 nm grain size powder remains sensitive to the ambient changes and the PL output increases ~50% whereas 10 nm grain size powders photoluminescence is quenched.
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