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Articles by keyword: «Surface Passivation»

• A Comparative Study of Surface Passivation on SiC BJTs with High Current Gain
  Published in: Silicon Carbide and Related Materials 2006 (p631)
• Chain Length Dependence of SAMs-Assisted Copper Thermocompression Bonding
  Published in: NEMS/MEMS Technology and Devices - ICMAT2009 (p291)
• Characterization of Phosphorus Implanted n⁺/p Junctions Integrated as Source/Drain Regions in a 4H-SiC n-MOSFET
  Published in: Silicon Carbide and Related Materials 2008 (p687)
• Comparison of Efficiencies of Different Surface Passivations Applied to Crystalline Silicon
  Published in: Gettering and Defect Engineering in Semiconductor Technology XI (p585)
• Confinement Levels in Passivated SiGe/Si Quantum Well Structures
  Published in: Gettering and Defect Engineering in Semiconductor Technology XIII (p541)
• Effects of Initial Nitridation on the Characteristics of SiC-SiO₂ Interfaces
  Published in: Silicon Carbide and Related Materials - 2002 (p583)
• Enhanced Current Gain (>250) in 4H-SiC Bipolar Junction Transistors by a Deep-Level-Reduction Process
  Published in: Silicon Carbide and Related Materials 2011 (p1117)
• Evolution of Interdiffused Gaussian-Shape Nanolayer in Au-Si(111) System at Ambient Condition
  Published in: Diffusion in Solids and Liquids V (p1133)
• Fabrication and Characterization of Uniform Quantum Size Porous Silicon
  Published in: Functional Materials and Devices (p232)
• Germanium Surface Passivation Using Ozone Gaseous Phase
  Published in: Ultra Clean Processing of Semiconductor Surfaces VIII (p37)
• HF Last Passivation for High Efficiency a-Si/c-Si Heterojunction Solar Cells
  Published in: Ultra Clean Processing of Semiconductor Surfaces X (p345)
• High-Frequency SiC MESFETs with Silicon Dioxide/Silicon Nitride Passivation
  Published in: Silicon Carbide and Related Materials 2005 (p1239)
• Low-Temperature Deposition of Amorphous Carbon Films for Surface Passivation of Carbon-Doped Silicon Oxide
  Published in: Advanced Materials and Processing (p645)
• Nitrogen Passivation of (0001) 4H-SiC Dangling Bonds
  Published in: Silicon Carbide and Related Materials 2007 (p469)
• Non-Ideal I-V-Characteristics of Block-Cast Silicon Solar Cells
  Published in: Polycrystalline Semiconductors III (p139)