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Articles by keyword: «Switching»

• 12.9 kV SiC PiN Diodes with Low On-State Drops and High Carrier Lifetimes
  Published in: Silicon Carbide and Related Materials 2011 (p949)
• 1200 V SiC BJTs with Low V_CESAT and High Temperature Capability
  Published in: Silicon Carbide and Related Materials 2010 (p686)
• 1200 V-Class 4H-SiC “Super” Junction Transistors with Current Gains of 88 and Ultra-Fast Switching Capability
  Published in: Silicon Carbide and Related Materials 2011 (p1127)
• 288 V-10 V DC- DC Converter Application Using AlGaN/GaN HFETs
  Published in: Silicon Carbide and Related Materials 2007 (p1321)
• 4H-SiC Power BJTs with High Current Gain and Low On-Resistance
  Published in: Silicon Carbide and Related Materials 2006 (p767)
• A 600V Deep-Implanted Gate Vertical JFET
  Published in: Silicon Carbide and Related Materials 2003 (p1217)
• A Computationally Efficient Switching Based Lossless Compression Algorithm for Natural Images
  Published in: Materials Science and Information Technology (p6540)
• Characterization of Fast Switching Capability for Diamond Schottky Barrier Diode
  Published in: Silicon Carbide and Related Materials 2010 (p820)
• Comparative Study of SiC MOSFETs in High Voltage Switching Operation
  Published in: Silicon Carbide and Related Materials 2011 (p1081)
• Conductivity Switching Behaviors in ZrO₂ and YSZ Films Deposited by Pulsed Laser Depositions
  Published in: Fracture and Strength of Solids VI (p1301)
• Domain Switching and Crack Tip Opening Stress Variation in Ferroelectric Ceramics
  Published in: Advances in Fracture and Strength (p2557)
• Effect of Boron Implantation on 6H-SiC N-MOSFET Interface Properties
  Published in: Silicon Carbide and Related Materials - 1999 (p1303)
• Electrical Characteristics Temperature Dependence of 600V-Class Deep Implanted Gate Vertical JFET
  Published in: Silicon Carbide and Related Materials 2004 (p881)
• Ferroelectric Behaviour and Related Physical Properties of some Copolymers of Vinylidene Fluoride
  Published in: Ferroelectric Polymers and Ceramic-Polymer Composites (p161)
• Gate Control of Junction Impact Ionization Avalanche in SOI MISFETs: Theoretical Model
  Published in: Nanoscaled Semiconductor-on-Insulator Materials, Sensors and Devices (p43)