| Paper Title | Page |
|---|---|
|
Authors: Hung Yu Chiu, Yean Kuen Fang, Feng Renn Juang |
98 |
|
High-Resolution Topography Analysis on Threading Edge Dislocations in 4H-SiC Epilayers Authors: Isaho Kamata, Masahiro Nagano, Hidekazu Tsuchida, Yi Chen, Michael Dudley |
305 |
|
Influence of the Surface Structure on the Growth of a Metallic Deposit on Oxide: Au/Al2O3 and Au/WO3 Authors: M. Gillet, C. Lemire, E. Gillet |
103 |
|
Influence of Threading Dislocations on Lifetime of Gate Thermal Oxide Authors: Kensaku Yamamoto, M. Nagaya, H. Watanabe, E. Okuno, T. Yamamoto, S. Onda |
477 |
|
New Separation Method of Threading Dislocations in 4H-SiC Epitaxial Layer by Molten KOH Etching Authors: T. Katsuno, Y. Watanabe, Fujiwara Hirokazu, Masaki Konishi, Takeo Yamamoto, Takeshi Endo |
298 |
|
Solution Growth of Off-Axis 4H-SiC for Power Device Application Authors: Ryo Hattori, Kazuhiko Kusunoki, Nobuyuki Yashiro, Kazuhito Kamei |
179 |