Papers by Keyword: TEM

Abstract: Polycarbonate (PC) nanocomposites were prepared by melt intercalation technique in an intermeshing co-rotating twin-screw extruder. Both unmodified (Na+MMT) and organo-modified (Cloisite 10A & OMMT) clays were used for the preparation of nanocomposites. The effect of addition of clays on the morphological and dynamic mechanical properties of PC matrix has been studied. The wide angle X-ray (WAXD) studies reveal a dominated exfoliated morphology of the nanocomposites at a clay content of 5%. The intercalated morphology is predominated upto clay content of 3%. Transmission electron microscopy (TEM) demonstrated the co-existance of intercalated/exfoliated morphology in all the composites. Dynamic mechanical analysis (DMA) shows an increase in storage modulus indicating higher stiffness in case of organomodified clay filled composites as compared to unmodified & virgin matrix.

Abstract: Nanotubes were produced from commercial and self-prepared anatase and rutile which were treated with 7.5 M NaOH over a temperature range of 100 – 200°C in 20°C increments. The formation of nanotubes was examined as a function of starting material type and size. Products were characterised by X-Ray Diffraction (XRD), Transmission Electron Spectroscopy (TEM), and Raman Spectroscopy. The results indicated that both phase and crystallite size affected the nanotube formation. Rutile was observed to require a greater driving force than anatase to form nanotubes, and increases in crystallite sizes appeared to impede formation slightly.

Abstract: The crystallographic structure of semiconductor - insulator - semiconductor (SIS) structures consisting of a Si(111) substrate, Pr2O3 and Y2O3 insulating high-k materials, and Si cap layer was characterized by a combination of X-ray pole figure measurement and conventional X-ray diffraction. Oxide and Si cap layer were grown by molecular beam epitaxy and have the same 111 lattice orientation as the substrate. It is shown that the oxide layers grow in a type B stacking orientation only, while the epi-layer exhibits exclusively the same type A orientation as the substrate. A small fraction of the epi-Si lattice was identified with 511 netplanes parallel to the surface. TEM investigations identify these areas as structural defects between Si grains of differing stacking sequence.

Abstract: Hydrogenated n and p doped Czochralski Si substrates have been studied by means of atomic force microscopy, scanning and transmission electron microscopy, Raman spectroscopy and microwave photoconductivity decay techniques. The measurements show that the surface is roughest in ndoped samples which are plasma treated at high frequency. The cone density was found to be highest on p-doped samples, which correlates well to the higher density of defects observed in pdoped samples. The surface cones were found to consist of nanograins, twins and stacking faults with random orientations, several hydrogen induced defects and bubbles. The size, density and formation depth of the subsurface defects were seen to depend on doping type, doping level, plasma frequency and hydrogenation time. Raman spectroscopy shows formation of nearly free hydrogen molecules, which are presumed to be located in nano-voids or platelets. These molecules dissolved at temperatures around 600°C. By means of the &-PCD measurements, it is demonstrated that hydrogen-initiated structural defects act as active recombination centres, which are responsible for the degradation of the minority carrier lifetime.

Abstract: Transmission electron microscopy (TEM) and scanning electron microscopy (SEM) have been used to compare hydrogen defects formed in p doped [001] oriented Cz silicon samples which are H+ plasma treated , H+ implanted or Si+ implanted + H+ plasma treated. Samples were studied as processed and after annealing at 250°C, 450°C and 600°C. It is found that 1 hour H+ plasma treatment at 250°C produces a low density of large defects (~100 nm) in prefered {111} plans close to the surface. H+ implantation at a dose of 3x1016 cm-2 produces high density of small (~ 20 nm) mostly {100} platelets that after 1 hour annealing at 450°C result in microcrack formation. Lower H+ implantation doses form very few microcracks at this temperature. Silicon implantation with a dose of 1015 cm2 followed by 1 hour H+ plasma treatment at 250°C and 1 hour annealing at 450°C produces similar microstructure and microcracks as the 3x1016 cm2 H+ implantation dose.

Abstract: The synthesis behaviour and characterisation of nanocrystalline materials is presented. The materials synthesised are ZnO and InP doped with shallow donors and acceptors, respectively. Characterisation was performed with radioactive isotopes using the perturbed γγ angular correlation technique (PAC), thereby yielding local information on an atomic scale. The characterisation was supplemented by X-ray diffraction, transmission electron microscopy, UV/VIS absorption spectroscopy, photoluminescence spectroscopy, and extended X-ray absorption fine structure spectroscopy. It was shown that the successful incorporation of dopants in nanocrystalline ZnO and InP requires annealing at temperatures at which the growth of the nanocrystals in the sample becomes a significant process.

Abstract: We synthesized barium titanate (BaTiO3) nanoparticles by sol-gel process and investigated their crystallization behavior using differential scanning calorimetry and X-ray diffraction. BaTiO3 nanoparticles with various degrees of crystallinity were obtained by adjusting synthesis conditions. Under aging conditions that do not allow dealcholization reaction to complete, many hydroxyl ligands remain in as-synthesized BaTiO3 nanoparticles, resulting in the formation of voids or defects in the nanoparticles after calcination. It is essential to use high concentration alkoxides precursor solutions for producing BaTiO3 nanoparticles with high crystallinity at low temperature.

Abstract: Studies on lattice change of a nickel-phosphorus amorphous alloy were carried out using not only high temperature X-ray diffraction but also extended X-ray absorption fine structure (EXAFS) analysis. Their thermal properties were characterized by differential scanning calorimetry (DSC). Since the results suggested that lattice relaxation occurred in the amorphous state by annealing, EXAFS measurements were carefully performed for characterizing the local structure of the amorphous alloys. The EXAFS analysis showed that the local structures around Ni atoms, which may be the Ni-Ni and Ni-P correlation, were changed by annealing. High temperature X-ray diffraction showed that small amount of crystal phase appeared by annealing up to 820 K, while clear diffraction peaks of Ni3P were observed above 1100 K. These micro/nanoscale structural changes did not correspond to that obtained by DSC which showed an exothermic reaction of atomistic reordering at 630 K. We need analysis of the nanostructures by small angle X-ray scattering or a high resolution transmission electron microscope.

Abstract: Dislocation structure of 10º low-angle tilt grain boundary in α-Al2O3 has been observed by high-resolution electron microscopy (HRTEM). It was found that perfect <1120> edge dislocations, which are introduced to compensate the misorientation, dissociated into two mixed partial dislocations with {1120} stacking-fault in between. The distances between the two partials were estimated by the force balances between repulsive forces of periodical dislocations and attractive forces from stacking-fault. The stacking-fault energy for 10o low-angle tilt grain boundary was estimated to be much higher than the previously reported value.

Abstract: The stored energy during cold working has been estimated by two approaches. In the first approach, line broadening measurements were determined by neutron diffraction. The second approach is based on the model developed by Dillamore et al. [1]. Therefore, great attention has been paid to the influence of the deformation cell morphology, cell size and the eventual presence of orientation gradient inside the grains according to their orientation. Experimental results show this hierarchy E{111} <112> >E{111} <110>>E{001} <110>.