Papers by Keyword: Target Substrate Distance

Abstract: Hydrogen doped AZO films (HAZO) were prepared by RF magnetron sputtering. A systematic study of the effect of substrate to target distance (Dst) on the structural, electrical and optical properties of the as-grown HAZO films was carried out. Compared with the Al-doped ZnO films, the hydrogen in the atmosphere influenced the growth of the films by incorporating in the films and bombarding the surface of the film, namely, the Dst, which induced the residual stress and the roughness of the films decreased with an increase of the Dst. The films showed a smaller grain size. The surface work function of the films changed with the composition of the films, reaching a maximum at 7.5cm.

Abstract: The target-substrate distance has a significant effect on the morphology and the relative deposition rate of fluorocarbon films deposited by RF magnetron sputtering. The films were deposited on regenerated cellulose substrate using a polytetrafluoroethylene (PTFE) target, with argon as the working gas. The surface and fracture cross-section morphologies of the deposited films were examined by scanning electron microscopy (SEM). The average thickness of the fluorocarbon films and the relative deposition rates were calculated for varying target-substrate distances. The films had island-like structures composed of nanoscale particles, and the surfaces were not flat. The density of the particles increased and their size decreased with increase of the target-substrate distance in the range 30 to 80 mm. The relative deposition rate increased at first and then decreased with increased target-substrate distance: the optimal target-substrate distance was 50-60 mm.

Abstract: By using electron beam physical vapor deposition (EB-PVD) technology, Ti-Al thin sheet with dimension of 450mm×450mm×0.2mm was prepared and the microstructure of Ti-Al deposit was investigated by means of scanning electron microscopy (SEM), atom force microscopy (AFM) and X-ray diffraction (XRD), and then the effect on deposit by re-evaporation of Al was explored by calculating the ratio of re-evaporating capacity with depositing capacity of Al on the substrate. The results indicate that there existed equiaxed crystal and columnar crystal along the cross-sectional may resulted from the transformation latent heats released during the transition course of atoms from gaseous state to solid state, and the variation of target-substrate distance would take effect on the phase composition due to the changing of atoms collision probability and radiant heat quantity absorbed by substrate. The effect on deposit by re-evaporation of Al could be neglected because the re-evaporating capacity of Al was far below that of the depositing capacity.