Papers by Keyword: Texture Measurement

Abstract: The paper deals with the modeling of the technological texture of the pressed ceramic materials in the radial and axial direction, which consists in the graphical representation and subsequent analysis of the distribution of the electrostatic field potential differences on the surface of the dielectric sample with the diameter d and the thickness h located between the electrodes. In occasion of observing radial texture the electrodes have the cylindrical configuration and in occasion of observing the axial texture in the sample the electrodes have the axial configuration. The theoretical relationship in the paper is derived for the calculation of the voltage values measured at any position between the center electrode and the peripheral electrode, at a constant voltage U applied to the outer and inner electrodes of the dielectric sample of thickness h of the raw ceramic sample material (radial texture). Measurements have demonstrated the suitability of identifying the technological texture by measuring the potential differences on the sample surface which is located between the electrodes in the relation to the technology preparation and to the quality of the fired ceramic production.

Abstract: Texture metrology of large optical components causes many practical problems, from handling heavy units in the laboratory, to applying existing bench top devices, unable to access most of the part area. Application of an on-machine device allows these practical issues to be overcome and provides an opportunity for an automated metrology process. We describe our work on a texture interferometer that is mounted onto a Zeeko optical polishing machine for in-process surface texture measurements on large optics.

Abstract: With area detector X-ray diffraction system, the orientation of superconductor films and their relationships with substrates can be easily examined. For YBCO high temperature superconductor films having complex crystalline orientation relationship fore and after melting process, 2-dimesional X-ray diffraction provides us much more information than common X-ray diffraction. This is very helpful for understanding the peritectic reaction during melting process because the growth mechanism of Y211 crystalline can be explained from its orientation information. Y211 phrase in the film and its orientation relationship with YBCO phase and MgO substrate have been analyzed at first. It is found that Y211 crystalline is well match with both MgO substrate and YBCO parent phase. Then the melting process of YBCO has been discussed from the view of the orientation relationship between each phase.