| Paper Title | Page |
|---|---|
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"New Donors" in Czochralski Grown Silicon Annealed at T≥ 600°C under Compressive Stress Authors: Valentin V. Emtsev, Boris A. Andreev, Gagik A. Oganesyan, D.I. Kryzhkov, Andrzej Misiuk, Charalamos A. Londos, M.S. Potsidi |
181 |
|
Authors: Eugene B. Yakimov, Olga V. Feklisova, Maurizio Acciarri, Anna Cavallini, Sergio Pizzini |
327 |
|
Authors: S.A. McQuaid, B.K. Johnson, Robert J. Falster, K.F. Kelton |
347 |
|
Anomalous Fast Annihilation of Thermal Donors in Carbon-Rich Silicon Authors: Y. Kamiura, Tomoyuki Maeda, Y. Yamashita, Fumio Hashimoto |
1321 |
|
Defects and Diffusion: First- Principles Modeling Authors: Young Joo Lee, Risto M. Nieminen |
261 |
|
Diffusion and Precipitation of Oxygen in Silicon Doped with Germanium Authors: Lyudmila I. Khirunenko, V.I. Shakhovtsov, V.V. Shumov |
1767 |
|
Diffusion and Precipitation of Oxygen in Silicon Doped with Germanium Authors: Lyudmila I. Khirunenko, Yu.V. Pomozov, V.I. Shakhovtsov, V.V. Shumov |
183 |
|
DLTS Study on Deep Levels Formed in Plasma Hydrogenated and Subsequently Annealed Silicon Authors: Yue Long Huang, Eddy Simoen, C. Claeys, Reinhart Job, Yue Ma, Wolfgang Düngen, Wolfgang R. Fahrner, J. Versluys, Paul Clauws |
547 |
|
Effect of Annealing Temperature on the Properties of Silicon Crystal Authors: Qiu Yan Hao, Xin Jian Xie, Bing Zhang Wang, Cai Chi Liu |
1323 |
|
Effect of Electron Irradiation on Thermal Donors in Oxygen-Doped High-Resistivity FZ Si Authors: K. Takakura, H. Ohyama, T. Yoshida, Hidekazu Murakawa, J.M. Rafí, Reinhart Job, Alexander G. Ulyashin, Eddy Simoen, C. Claeys |
53 |