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Articles by keyword: «Threading Dislocation»

• A Theoretical Calculation of Misfit Dislocation and Strain Relaxation in Step-graded In_xGa _1-x N/GaN Layers
  Published in: MEMS, NANO and Smart Systems (p456)
• A Wet Etching Technique to Reveal Threading Dislocations in Thin Germanium Layers
  Published in: Ultra Clean Processing of Semiconductor Surfaces VIII (p83)
• Crack-Free, Single-Crystal GaN Grown on 100 mm Diameter Silicon
  Published in: Silicon Carbide and Related Materials - 1999 (p1463)
• Deflection of Threading Dislocations with Burgers Vector c/c+a Observed in 4H-SiC PVT–Grown Substrates with Associated Stacking Faults
  Published in: Silicon Carbide and Related Materials 2011 (p347)
• Differences in Emission Spectra of Dislocations in 4H-SiC Epitaxial Layers
  Published in: Silicon Carbide and Related Materials 2007 (p345)
• Electrical and Optical Characterization of Thin Semiconductor Layers for Advanced ULSI Devices
  Published in: Gettering and Defect Engineering in Semiconductor Technology XI (p539)
• Formation Mechanism of Stacking Faults in PVT 4H-SiC Created by Deflection of Threading Dislocations with Burgers Vector c+a
  Published in: Silicon Carbide and Related Materials 2010 (p269)
• Growth and Evaluation of GaN Grown on Patterned Sapphire Substrates
  Published in: Advanced Materials and Processing IV (p351)
• High Energy Si, Zn and Ga Ion Implantation into GaAs on Si
  Published in: Defects in Semiconductors 18 (p1881)
• Impact of the Growth Parameters on the Structural Properties of Si_0.8Ge_0.2 Virtual Substrates
  Published in: Gettering and Defect Engineering in Semiconductor Technology XI (p445)
• Influence of Threading Dislocations on Lifetime of Gate Thermal Oxide
  Published in: Silicon Carbide and Related Materials 2011 (p477)
• Isotropic and Anisotropic Elasticity Studies of Mismatch Dislocations, Critical Thickness and Work Hardening in Epilayers
  Published in: Defect and Diffusion Forum Vols. 136-137 (p61)
• New Separation Method of Threading Dislocations in 4H-SiC Epitaxial Layer by Molten KOH Etching
  Published in: Silicon Carbide and Related Materials 2010 (p298)
• Nonpolar and Semipolar Orientations: Material Growth and Properties
  Published in: Advances in Light Emitting Materials (p211)
• Nucleation of Dislocations during Physical Vapor Transport Growth of Silicon Carbide
  Published in: Silicon Carbide and Related Materials - 1999 (p63)