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Articles by keyword: «Threading Edge Dislocation»

• A Simple Mapping Method for Elementary Screw Dislocations in Homoepitaxial SiC Layers
  Published in: Silicon Carbide and Related Materials 2001 (p443)
• Aspects of Dislocation Behavior in SiC
  Published in: Silicon Carbide and Related Materials 2007 (p261)
• Bending of Basal-Plane Dislocations in VPE Grown 4H-SiC Epitaxial Layers
  Published in: Silicon Carbide and Related Materials 2001 (p231)
• Characterization of Basal Plane Dislocations in 4H-SiC Substrates by Topography Analysis of Threading Edge Dislocations in Epilayers
  Published in: Silicon Carbide and Related Materials 2009 (p303)
• Contrast of Basal Plane and Threading Edge Dislocations in 4H-SiC by X-Ray Topography in Grazing Incidence Geometry
  Published in: Silicon Carbide and Related Materials 2007 (p321)
• Developing an Effective and Robust Process for Manufacturing Bipolar SiC Power Devices
  Published in: Silicon Carbide and Related Materials 2006 (p77)
• Differences in Emission Spectra of Dislocations in 4H-SiC Epitaxial Layers
  Published in: Silicon Carbide and Related Materials 2007 (p345)
• Nucleation of c-Axis Screw Dislocations at Substrate Surface Damage during 4H-Silicon Carbide Homo-Epitaxy
  Published in: Silicon Carbide and Related Materials 2009 (p295)
• Observation of Misfit Dislocations Introduced by Epi-Layer Growth on 4H-SiC
  Published in: Silicon Carbide and Related Materials 2007 (p309)
• Simulation of Threading Edge Dislocation Images in X-Ray Topographs of Silicon Carbide Homo-Epilayers
  Published in: Silicon Carbide and Related Materials 2005 (p411)
• Techniques for Minimizing the Basal Plane Dislocation Density in SiC Epilayers to Reduce V_f Drift in SiC Bipolar Power Devices
  Published in: Silicon Carbide and Related Materials 2005 (p141)
• The Effect of 4H-SiC Substrate Surface Scratches on Chemical Vapor Deposition Grown Homo-Epitaxial Layer Quality
  Published in: Silicon Carbide and Related Materials 2008 (p109)
• X-Ray Three-Dimensional Topography Imaging of Basal-Plane and Threading-Edge Dislocations in 4H-SiC
  Published in: Silicon Carbide and Related Materials 2011 (p323)