| Paper Title | Page |
|---|---|
|
4H-SiC MOSFETs with a Novel Channel Structure (Sandwiched Channel MOSFET) Authors: J. Kaido, Tsunenobu Kimoto, Jun Suda, Hiroyuki Matsunami |
1409 |
|
980 V, 33A Normally-Off 4H-SiC Buried Gate Static Induction Transistors Authors: Akio Takatsuka, Yasunori Tanaka, Koji Yano, Tsutomu Yatsuo, Kazuo Arai |
662 |
|
A Model of Threshold Voltage in FinFET Authors: Jian Liu, Li Li, X.H. Zhang |
167 |
|
A Reduction of Defects in the SiO2-SiC System Using the SiC Vacuum Field-Effect Transistor (VacFET) Authors: Kevin M. Speer, Philip G. Neudeck, Mehran Mehregany |
777 |
|
A Threshold Voltage Simulation of Hydrogen-Terminated Diamond MESFETs Authors: Xiao Feng Zhuang, Qing Kai Zeng, Bing Ren, Zhen Hua Wang, Yue Lu Zhang, Li Ya Shen, Mei Bi, Jian Huang, Ke Tang, Ling Yun Shi, Yi Ben Xia, Lin Jun Wang |
1093 |
|
An Approach to Model Temperature Effects of Interface Traps in 4H-SiC Authors: R. Ramakrishna Rao, S. Balaji, Kevin Matocha, Vinayak Tilak |
497 |
|
Analysis of Threshold Voltage Variations in Fin Field Effect Transistors Authors: Kazuo Tsutsui, Yusuke Kobayashi, Kuniyuki Kakushima, Parhat Ahmet, V.Ramgopal Rao, Hiroshi Iwai |
194 |
|
Analytical Modeling for Short Channel SOI-MOSFET and to Study its Performance Authors: K. Senthil Kumar, Saptarsi Ghosh, Anup Sarkar, S. Bhattacharya, Subir Kumar Sarkar |
5150 |
|
Analytical Threshold Voltage Models for Strained Si/Strained Si1-xGex/Relaxd Si1-yGey PMOSFET Authors: Shan Shan Qin, He Ming Zhang, Hui Yong Hu, Xiao Yan Wang, Guan Yu Wang |
5447 |
|
Anisotropy of Inversion Channel Mobility in 4H- and 6H-SiC MOSFETs on (11-20) Face Authors: Hiroshi Yano, Toshio Hirao, Tsunenobu Kimoto, Hiroyuki Matsunami, Katsunori Asano, Yoshitaka Sugawara |
1105 |