HOME CONTACT My eBook

Username: Password:

> @scientific.net

Articles by keyword: «Threshold Voltage»

• 4H-SiC MOSFETs with a Novel Channel Structure (Sandwiched Channel MOSFET)
  Published in: Silicon Carbide and Related Materials 2003 (p1409)
• 980 V, 33A Normally-Off 4H-SiC Buried Gate Static Induction Transistors
  Published in: Silicon Carbide and Related Materials 2010 (p662)
• A Model of Threshold Voltage in FinFET
  Published in: Optical, Electronic Materials and Applications (p167)
• A Reduction of Defects in the SiO₂-SiC System Using the SiC Vacuum Field-Effect Transistor (VacFET)
  Published in: Silicon Carbide and Related Materials 2011 (p777)
• A Threshold Voltage Simulation of Hydrogen-Terminated Diamond MESFETs
  Published in: Advanced Composite Materials (p1093)
• An Approach to Model Temperature Effects of Interface Traps in 4H-SiC
  Published in: Silicon Carbide and Related Materials 2006 (p497)
• Analysis of Threshold Voltage Variations in Fin Field Effect Transistors
  Published in: Technology Evolution for Silicon Nano-Electronics (p194)
• Analytical Modeling for Short Channel SOI-MOSFET and to Study its Performance
  Published in: Mechanical and Aerospace Engineering (p5150)
• Analytical Threshold Voltage Models for Strained Si/Strained Si_1-xGe_x/Relaxd Si_1-yGe_y PMOSFET
  Published in: Mechanical and Aerospace Engineering (p5447)
• Anisotropy of Inversion Channel Mobility in 4H- and 6H-SiC MOSFETs on (11-20) Face
  Published in: Silicon Carbide and Related Materials - 1999 (p1105)
• Comparison of the Threshold-Voltage Stability of SiC MOSFETs with Thermally Grown and Deposited Gate Oxides
  Published in: Silicon Carbide and Related Materials 2009 (p681)
• Controlling Characteristics of 4H-SiC(0001) p-Channel MOSFETs Fabricated on Ion-Implanted n-Well
  Published in: Silicon Carbide and Related Materials 2011 (p781)
• Critical Issues for MOS Based Power Devices in 4H-SiC
  Published in: Silicon Carbide and Related Materials 2008 (p743)
• Effect of Temperature and Al Concentration on the Electrical Performance of GaN and Al_0.2Ga_0.8N Accumulation-Mode FET Devices
  Published in: Silicon Carbide and Related Materials 2009 (p1215)
• Electrical Characteristics of Extended Gate FET Sensing Chip Constructed for Detection of DNA
  Published in: Manufacturing Science and Engineering I (p4189)