Papers by Keyword: Transfer Coefficient

Abstract: Boron, aluminum, and nitrogen are major and critical elements in silicon carbide. The concentrations of these elements influence the electrical properties of silicon carbide and also the generation of defects. Purification was executed in the powder manufacturing process. High purity powder was used to grow the crystal, which was then sliced into wafers in this work. Secondary ion mass spectroscopy (SIMS) and glow discharge mass spectrometry (GDMS) were used to measure boron, aluminum, and nitrogen concentrations in wafer and powder to compare the concentration difference. The concentration of the elements varies depending on the element’s physical property. Transfer coefficient is defined as the ratio of element concentration in wafer to powder, which is interesting to realize the element behavior in PVT process and studied in this work.

Abstract: Taking the breakage of the conduit joints caused by seismic wave propagation as main failure mode, seismic performance analysis of the pipeline was performed with wave theory method by considering pipe’s axial deformation. Influencing factors of pipe’s deformation such as seismic wave’s incident angle, shear wave velocity, pipeline’s diameter and wall thickness were deeply discussed. Two different methods for calculating axial deformation transfer coefficient were presented to check pipeline’s seismic deformation.