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Papers by Keyword: Transient Enhanced Diffusion TED

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The Deep Boron Level in High-Voltage PiN Diodes

Authors: W. Stadler, Anders Hallén, John Österman, Uwe Zimmermann, Bengt Gunnar Svensson

1309

Suppression of Boron Transient Enhanced Diffusion by C Trapping

Authors: S. Mirabella, A. Coati, S. Scalese, D. De Salvador, S. Pulvirenti, G. Bisognin, E. Napolitani, A. Terrasi, M. Berti, A. Carnera, A.V. Drigo, F. Priolo

195

Diffusion of Dopants and Impurities in Device Structures of SiC, SiGe and Si

Authors: Martin S. Janson, Margareta K. Linnarsson, J.S. Christensen, P. Lévêque, Andrej Yu. Kuznetsov, H.H. Radamson, Anders Hallén, Arne Nylandsted-Larsen, Bengt Gunnar Svensson

597

Doping of Silicon Carbide by Ion Implantation

Authors: Bengt Gunnar Svensson, Anders Hallén, Margareta K. Linnarsson, Andrej Yu. Kuznetsov, Martin S. Janson, Boleslaw Formanek, John Österman, P.O.Å. Persson, L. Hultman, L. Storasta, F.H.C. Carlsson, Peder Bergman, C. Jagadish, Erwan Morvan

549

Energetics of Extrinsic Defects in Si and their Role in Nonequilibrium Dopant Diffusion

Authors: Fuccio Cristiano, B. Colombeau, A. Claverie

199

Enhanced Diffusion in Nonstoichiometric AlAs/GaAs Heterostructures

Authors: D.D. Nolte, I. Lahiri, R. Guersen, M.R. Melloch, J.M. Woodall

Interaction and Migration Properties of Ion Beam Induced Point Defects in Crystalline Silicon: Basic Research and Technological Relevance

Authors: Emanuele Rimini, Salvatore Coffa, Sebania Libertino, G. Mannino, F. Priolo, Vittorio Privitera

137

Stress in Silicon Nitride Films and Its Effect on Boron Diffusion in Silicon

Authors: Satoshi Matsumoto, K. Osada, Y. Zaitsu, T. Shimizu, Eisuke Arai, Shoichiro Tanigawa, F. Uberti