Papers by Keyword: Transition Metal

Abstract: The impact of nickel on minority carrier recombination lifetime has been studied in ptype CZ silicon using SPV and μ-PCD techniques. The results show that small oxide precipitates can be used to improve drastically the detection limit of nickel. This is explained by the decoration of oxide precipitates by nickel, which results in the enhanced recombination activity. In the absence of oxide precipitates or other related bulk microdefects nickel precipitates preferably to wafer surfaces, which does not have such a high impact on the measured recombination lifetime, at least on a low concentration level. Low temperature anneal at 180°C or light illumination of the wafers after nickel in-diffusion did not reveal any further change in lifetime in any of the wafers, which may indicate that nickel precipitates efficiently during air-cooling from high temperature.

Abstract: Hydrogenation / dehydrogenation properties of a series of ternary face centered cubic (FCC) hydrides “Mg7MHx” (M = Sc, Ti, V, Zr, Nb, Hf and Ta), which were prepared by a high-pressure technique, were investigated. Differential scanning calorimeter (DSC) measurements under hydrogen atmosphere revealed that these hydrides exhibited reversible hydrogen releasing and re-storing properties at around 600 and 560 K, respectively. These releasing temperatures are lower by 100 ~ 120 K than that of MgH2. Furthermore, pressure-composition isotherm at 523 K shows that these FCC hydrides release 3.8 - 5 wt. % hydrogens.

Abstract: First principle calculations were performed on the electronic and magnetic structures of the transition metals doped GaN. Seven elements in 3d transition metals from V to Cu were used as a dopant. Magnetic phase was stable compared to non-magnetic phase for all transition metals doped GaN. Total magnetic moments followed Hund’s rule to maximize the magnetic moment. Transition element projected magnetic moments showed that most of magnetic moments were concentrated on transition metals in the cases of V, Cr, and Mn doped GaN, which could not be used for DMS. Since Fe and Ni doped GaNs are intrinsic insulators, Fe and Ni doped GaNs could not be used for DMS materials unless additional dopants are introduced. The most probable candidates for DMS applications were predicted to be Co or Cu doped GaNs, respectively.

Abstract: Iron, sulfur and transition metal powders were used as the starting materials to prepare iron disulfide (FeS2) cathode material at room temperature by high energy mechanical alloying. Modified FeS2 were also prepared by incorporation of transition metals like Co and Ni. Li/FeS2 cells with the prepared iron disulfides as cathodes were studied for discharge properties at room temperature using the 0.5M LiTFSI in tetra(ethylene glycol) dimethyl ether (TEGDME). The first discharge capacities of Li/composite FeS2 cell with 5 wt.% Co and 3 wt.% Ni were 571 and 844 mAh/g, respectively, compared to 389 mAh/g for the cell without any additive. The enhanced properties resulted from the better electronic conductivity of the material containing the metallic additive. The initial capacity and cyclic performance were improved when nickel and cobalt were added to prepare the modified iron disulfide.

Abstract: Transition metal-doped TiO2 powders as a photocatalyst were prepared by sol-gel process and Sb, Bi and Nb were introduced into them as dopants. The photocatalytic behaviors of the doped TiO2 powder were studied as a function of dopant, doping concentration and preparation conditions. X-ray diffraction, FT-Raman, B.E.T. and scanning electron microscopy were applied for structural and microstructural studies. Optical properties of the doped TiO2 powders were studied by UV-Visible Spectrometer and photocatalytic activity of the doped TiO2 was characterized in terms of the degradation of 1,4-dichlorobenzene. X-ray difraction analysis showed that doping with a transition metal ion suppresses anatase-to-rutile phase transition compared with the pure TiO2. The Sb and Nb-doped TiO2 powders did not exhibit any other diffraction peaks except those belonging to TiO2. On the other hand, a diffraction peak of Bi4Ti3O12 appears for 5 at.% Bi-doped samples. All of the doped TiO2 powders had higher specific surface area than undoped TiO2. Surface area increased with increasing dopant concentration depending on the dopant, from 33.9 m2/g to 55.4m2/g. The UV-visible absorption spectra of doped samples were red-shifted by 20~50nm according to the doping level. Also transition metal doped TiO2 powders exhibited better photocatalytic activity than the undoped TiO2. The increase in photoactivity is probably due to the increase in the interfacial electron transfer, red shifts, and better crystallinity.

Abstract: We report density functional calculations using the full-potential linearized muffin-tin orbital method on early first row transition metal doped Silicon Carbide in both cubic (3C) and hexagonal (4H) polytypes. The energy levels in the gap for Ti, V and Cr are in good agreement with the available photoluminescence experiments. Our calculation shows that the Ti impurity is active for 4H but not for 3C, while V and Cr impurities are active for both polytypes. The magnetic interactions are very different for Cr and Mn. Cr shows a very local exchange interaction that decays rapidly, which is similar for different polytypes and different sites. The exchange interaction for Mn is quite long range and is very sensitive to the location of the Mn pairs.

Abstract: Deep-level defects related with 5d transition metal, osmium (Os) have been studied in ntype GaAs. Os has been incorporated in epitaxial n-GaAs layers in situ, during growth by lowpressure metal-organic chemical vapour phase epitaxy (MOVPE) technique. Mesa p+nn+ junction diodes are fabricated for investigations by deep level transient spectroscopy (DLTS). Two deeplevel peaks, observed in majority carrier (electron) emission spectra, Os1 and Os2, show a significant shift in peak positions to lower temperatures with the applied junction reverse bias, demonstrating enhancement of the thermal emission rate by the junction electric field. Doublecorrelation DLTS (DDLTS) measurements have been employed for accurate quantitative investigations of the observed field dependence. However, in view of the relatively small concentration of the deep level Os1, this technique is found to yield reliable data only for the deep level corresponding to the dominant peak, Os2. Detailed data have been obtained on the field effect for Os2, extending over junction electric field values 3 x 106 V/m - 1.2 x 107 V/m. The measured emission rate signatures show a reduction of the thermal activation energy from 0.48 eV to 0.21 eV for Os2 over this electric field range. Analysis of the data in terms of the recent theoretical work on field dependence indicates that Os2 is associated with a substitutional Os donor.

Abstract: Rapidly solidified (RS) Al-TM (TM = transition metal) alloys are perspective materials from scientific, as well as technological point of view. Generally, they are produced by the melt atomization or by the melt spinning. Subsequent compaction is commonly performed by the hot extrusion. Since transition metals, such as Cr, Fe, Ni, Zr, Ti, Mn and others, have low diffusion coefficients in solid aluminium (lower by several orders of magnitude than those of common alloying elements like Cu, Si, Mg, Zn etc.) the RS Al-TM alloys are characterized by a high thermal stability. In this paper, several RS Al-TM (TM = Cr, Fe, Ti, Mn, Ni) alloys prepared by the melt spinning and melt atomization are compared to commercially available 2xxx, 6xxx and 7xxx wrought alloys. The main structural features of both RS and wrought alloys are described. The RS alloys are characterized by the presence of micro and nano-scale crystalline and/or quasi-crystalline phases and supersaturated solid solutions. The elevated-temperature behaviour is compared for both groups of materials. The thermal stability of the investigated materials is determined by room temperature hardness measurements after various annealing regimes and a high thermal stability of the RS alloys is demonstrated. The microstructural changes and phase transformations occurring in the investigated materials upon heating are described. In the Al-TM alloys, very slow decomposition of the supersaturated solid solutions, precipitation and decomposition of the metastable quasi-crystalline phases occur.

Abstract: Metallographic, X-ray diffraction and electron microscopy were used to study the phase compositions and structure of rapidly solidified the Al- alloys transition metals (Zr, Fe, Cr) subjected to severe plastic deformation (SPD) by torsion under a high quasi-hydrostatic pressure. It was established that upon SPD a number and a size of aluminides decrease with increasing a degree of deformation. For example, the maximum effect of deformation - induced dissolution of the particles are observed in the case where they have a dendritic structure and are about one μm in size. Upon SPD the supersaturation of α-phase increases by a factor of 2.5. (for rapidly solidified Al-Cr and Al-Cr-Zr alloys) and by a factor of 10 (for rapidly solidified Al-Fe alloy). After SPD all alloys have submicrocrystalline (SMK) Al-based matrix with grain size of 100-200 nm and high hardness of 2 GPa. The thermal stability of SMK deformed materials and some specific features of post deformation phenomena as an aging and a recrystallization were investigated.

Abstract: The electronic and structural properties of nickel-vacancy complexes in diamond were investigated by a total energy ab initio methodology. These results are discussed in the context of the electrically active centers, commonly found in synthetic diamond.