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Articles by keyword: «Trap»

• Antiprotons, Positrons and Antihydrogen
  Published in: Positron Annihilation - ICPA-9 (p75)
• Behaviors of Nonequilibrium Carriers in Er, O-Codoped GaAs for 1.5μm Light-Emitting Devices with Extremely Stable Wavelength
  Published in: Advanced Structural and Functional Materials Design (p159)
• Characterization of Traps in GaN pn Junctions Grown by MOCVD on GaN Substrate Using Deep-Level Transient Spectroscopy
  Published in: Silicon Carbide and Related Materials 2007 (p1297)
• Deep Level Investigation by Current and Capacitance Transient Spectroscopy in 4H-SiC MESFETs on Semi-Insulating Substrates
  Published in: Silicon Carbide and Related Materials 2003 (p1185)
• Defect Concentration Gradients at Semiconductor Junctions
  Published in: Defects in Semiconductors 17 (p1403)
• Diffusion of Transition Metals in Amorphous Silicon and Germanium
  Published in: Diffusion in Materials DIMAT 1996 (p729)
• Electron-Induced Damage Effects in 4H-SiC Schottky Diodes
  Published in: Silicon Carbide and Related Materials - 2002 (p439)
• Hole-Like Defects in n-Channel 4H-SiC MESFETs Observed by Current Transient Spectroscopy
  Published in: Silicon Carbide and Related Materials 2004 (p865)
• Minimization of Electric Field Enhancement at Electrode Edge by Surface High Resistive Layer in Ti/4H-SiC Schottky Barrier Diode
  Published in: Silicon Carbide and Related Materials 2001 (p1165)
• Production and Stacking of Slow Positron Beams with a High Current Linac
  Published in: Positron Annihilation - ICPA-10 (p967)
• Quantum Well Related Conductivity and Deep Traps in SiGe/Si Structures
  Published in: Gettering and Defect Engineering in Semiconductor Technology XI (p489)
• Temperature and Time Dependent Threshold Voltage Instability in 4H-SiC Power DMOSFET Devices
  Published in: Silicon Carbide and Related Materials 2007 (p1147)
• The long Afterglow and Thermoluminescence Properties of MAl₂O₄ Eu²⁺, Dy³⁺(M=Ca, Sr and Ba) Phosphors Syntheized by Combustion Technique
  Published in: New and Advanced Materials (p318)
• The Role of Threading Dislocations in the Physical Properties of GaN and its Alloys
  Published in: Silicon Carbide and Related Materials 2000 (p769)
• Traps Found in GaAs MESFETs: Properties Location and Detection
  Published in: Defects in Semiconductors 19 (p933)