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Articles by keyword: «Trapping»

• A Positron Lifetime Study of Defect Recovery in Electron Irradiated Zircaloy-2 and Zr-2.5 Nb
  Published in: Positron Annihilation - ICPA-9 (p997)
• Correlation of the Meyer-Neldel Rule and Persistent Photoconductivity in the Organic Semicondutor α-Sexithiophene
  Published in: The Meyer-Neldel Rule (p37)
• Diffusion of Dopants and Impurities in Device Structures of SiC, SiGe and Si
  Published in: Diffusion in Materials DIMAT2000 (p597)
• Diffusion of Light Elements in Diamond
  Published in: Defects and Diffusion in Ceramics (p31)
• Effects of Trapping in a-Si:H Diodes
  Published in: Hydrogenated Amorphous Silicon (p957)
• Electric Field Effect on Ps Formation. Black Blob Model
  Published in: Positron Annihilation - ICPA-12 (p392)
• Evaluation of Diffusion Coefficients from Composition Profiles - The Influence of Trapping
  Published in: Diffusion in Solids and Liquids (p384)
• Evidence for Temperature-Dependent Trapping in Pure and Iron-Doped YBa₂Cu₃O₇
  Published in: Positron Annihilation - ICPA-9 (p1313)
• High-Purity Versus High-Defect-Density Semiinsulating Substrates for SiC MESFET: Simulation of Device Characteristics
  Published in: Silicon Carbide and Related Materials 2004 (p869)
• Hydrogen Permeation in V-Nb Alloys
  Published in: Designing of Interfacial Structures in Advanced Materials and their Joints (p97)
• Hydrogen Solubility, Diffusion and Trapping in High Purity Aluminum and Selected Al-Base Alloys
  Published in: Aluminium Alloys - Their Physical and Mechanical Properties (p1583)
• Influence of Semi-Insulating Substrate Purity on the Output Characteristics of 4H-SiC MESFETs
  Published in: Silicon Carbide and Related Materials 2001 (p1363)
• Modelling of Trap-Controlled Hydrogen Diffusion in Steel
  Published in: Defects and Diffusion in Metals (p115)
• Monte Carlo Simulation of Charge Carriers' Trapping in Polycrystalline Semiconductors
  Published in: Polycrystalline Semiconductors IV (p367)
• Noise Behavior of 4H-SiC MESFETs at Low Drain Voltage
  Published in: Silicon Carbide and Related Materials 2000 (p703)