Papers by Keyword: Tungsten Doping

Abstract: W-doped Vanadium oxide thin films were prepared on the substrates of SiO₂ glass, float glass and Si (100) by reactive magnetron sputtering after annealing in vacuum. The structure, morphology and phase transition were characterized by X-ray diffractometer, atomic force microscopy (AFM) and differential thermal analysis (DTA), respectively. The results show that, the major phase of W-doped films on SiO₂ glass is VO₂.Dopant reduce the phase transition temperature of VO₂ thin films to 21.9°C. The root-mean-square roughness of the film increase for the longer deposition time.

Abstract: W-doped Vanadium oxide thin films were prepared on the substrates of glass and Si (100) by reactive magnetron sputtering after annealing in vacuum. The structure and morphology were characterized by X-ray diffractometer and atomic force microscopy(AFM), respectively. The results show that,when the oxygen volume percent (Po₂) increasing from 15% to 25%, the films on the Si(100) were vanadium oxides with high-valences. After vacuum annealing at 500°C for 2h, the major phase of W doped films on glass is VO₂. The surface roughness of the film increase for the longer time annealing.

Abstract: W-doped VO₂ thin films were prepared by magnetron sputtering after annealing in vacuum. The structure, morphology, infrared transmittance and phase transition were characterized by X-ray diffractometer, atomic force microscopy(AFM), infrared spectrometer (IR) and differential thermal analysis(DTA), respectively. The results show that after vacuum annealing at 500 °C for 2h, the major phase of W doped films is VO₂. Dopant reduce the phase transition temperature of VO₂ thin films to 21.9°C.