Papers by Keyword: UV Lithography

Abstract: A three-dimensional (3D) simulation system is developed for the moving mask UV lithography of thick photoresist. The exposure simulation model is obtained with consideration of the mask moving function, the refraction and energy loss of the UV light at the surface of photoresist, and the reflection at the photoresist/substrate interface. The development model is calculated by the fast marching method. In addition, the energy deposition distributions and the three-dimensional development profiles are presented under different conditions to study the effect of various parameters and to verify the accuracy by experiment. The results will be useful to understand the effects and to control the exposure conditions in the design process of moving mask UV lithography for thick-photoresist in the future.

Abstract: This paper reports the design of a tunable radio-frequency (RF) inductor and analyses the parameters that influence the quality factor (Q) of the inductor. In our paper we mainly discuss the influence of the thickness of the metal layer on the Q when other parameters are fixed. In order to achieve the high thickness, we use SU-8 as our photoresist instead of the traditional photoresist. Through the analysis, we calculate out the thickness of the metal layer is 23um when the Q reaches to maximum.

Abstract: For applications of injection mould fabrication in the field of MEMS, proton beam writing (PBW) and UV lithography are combined to manufacture 2 mm thick Ni moulds with sub-10 µm fine features in 10 µm deep fluidic channels. PBW is capable of writing micro and nano features with straight and smooth sidewalls with sub-10 nm RMS roughness, while UV lithography has the advantage of large area structuring through a mask. A newly developed positive resist maP1275 hv is presented in combination with PBW and UV lithography for Ni injection mould fabrication. Fine micro pillars with straight and smooth sidewalls have been achieved by PBW and linked with UV lithography into a microfluidic channel. The new resist is successfully removed after electroplating without compromising the Ni mould.

Abstract: A novel process with low cost to fabricate SiCN MEMS based on UV lithographic technique is present in this paper. The prepared MEMS are very promising to be used in high-temperature environments. By adding a photo initiator to the polysilazane precursor, the precursor becomes UV-sensitive and can be solidified upon exposure to UV light, which leads to the formation of UV photo lithographical patterns. Key issues of the fabrication process are investigated and various SiCN MEMS structures are fabricated by this technique.

Abstract: This paper presents the fabrication and preliminary experimental studies of flow performance on a valveless micro impedance pump actuated by the shear mode PZT actuator, a novel method of pumping fluid on the microscale. The micro impedance pump was constructed of three nickel electroforming components, two glass tubes, a PZT actuator and a glass substrate. The three electroforming components include a bottom structure plate, a channel plate and a top structure plate. The AZ-type positive photoresist was used as the electroforming mould, which was patterned by UV lithography. The top and bottom structure plates were aligned and assembled with the channel plate by epoxy adhesive such that a micro channel with a compressible section coupled at both ends to rigid sections of different impedance was formed. A pressure head can be built up to drive flow through the accumulative effects of wave propagation and reflection originating from the periodic PZT excitation, located asymmetrically along the length of the compressible section of the channel. Experimental results showed that the flow was reversible and pressure heads had a highly non-linear dependence on the frequency and amplitude of the excitation. Maximum flow rates of 13 μl min-1 have been achieved with the channel size of 15μm high and 4 mm wide.