Papers by Keyword: Ultrasonic Assisted Grinding

Abstract: Grinding force is an important indicator related to processing efficiency and residual strength in the progress of grinding SiC. With the method of ultrasonic assisted grinding (UAG), this paper studied the influence of four parameters on grinding force based on orthogonal experiment, namely vibration amplitude, depth of grinding, feed rate and spindle speed. A series of results with high efficiency and low grinding force were obtained. A regression empirical model under the condition of UAG was established and verified. It was also proved that ultrasonic vibration was conducive to improve the ground surface quality of workpiece.

Abstract: The machining technology of ultrasonic assisted ductile mode grinding for the silicon carbide (SiC) wafer carrier. The machining tool is designed and analyzed by ANASYS 14.0 and the machining technology is studied for the 6-inch SiC wafer carrier. The ultrasonic tool holder with the resonance frequency 26 kHz is designed and fabricated. The advantageous machining parameters are proposed that spindle rotation rate is 3000 rpm, feed speed is 200 mm/min, and ultrasonic output power is 250 W. The measurement results show that the average roughness (Ra) of the SiC is 0.18 μm, the MRR is over 2.4 mm³/min, the tool tips are only minor abrasion, and the cutting temperature are reduced. Obvious, the machining technology has the advantage of high surface quality, high machining efficiency and long tool life.