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Articles by keyword: «VLS»

• 3C-SiC Islands Formation on 6H-SiC(0001) Substrate from a Liquid Phase
  Published in: Silicon Carbide and Related Materials 2007 (p203)
• Comparison of Different Metal Additives to Si for the Homoepitaxial Growth of 4H-SiC Layers by Vapour-Liquid-Solid Mechanism
  Published in: Silicon Carbide and Related Materials 2003 (p245)
• Effect of the Si Droplet Size on the VLS Growth Mechanism of SiC Homoepitaxial Layers
  Published in: Silicon Carbide and Related Materials 2001 (p287)
• Effects of Temperature and Heating Rate on the Precipitation of 3C-SiC Islands on 4H-SiC(0001) from a Liquid Phase
  Published in: Silicon Carbide and Related Materials 2008 (p193)
• Electrical Characterisation of Heavily Al Doped 4H-SiC Layer Grown by Vapour-Liquid-Solid Epitaxy in Al-Si Melt
  Published in: Silicon Carbide and Related Materials 2004 (p421)
• Gas Fed Top-Seeded Solution Growth of Silicon Carbide
  Published in: Silicon Carbide and Related Materials 2005 (p111)
• Growth Kinetics of 3C-SiC on α-SiC by VLS
  Published in: Silicon Carbide and Related Materials 2007 (p199)
• Growth Mechanism of 3C-SiC Heteroepitaxial Layers on α-SiC by VLS
  Published in: Silicon Carbide and Related Materials 2007 (p195)
• Growth of SiC from a Liquid Phase at Low Temperature
  Published in: Silicon Carbide and Related Materials 2006 (p41)
• High SiC Growth Rate Obtained by Vapour-Liquid-Solid Mechanism
  Published in: Silicon Carbide and Related Materials 2006 (p105)
• Improvement of 4H-SiC Selective Epitaxial Growth by VLS Mechanism Using Al and Ge Based Melts
  Published in: Silicon Carbide and Related Materials 2005 (p275)
• Influence of Post-Growth Annealing on the Defects Nature and Distribution in VLS Grown (111) 3C-SiC Layers
  Published in: Silicon Carbide and Related Materials 2010 (p241)
• MOCVD Growth of SiC Nanowires Aiming at the Control of their Shape
  Published in: Advanced Materials and Processing (p657)
• Morphological Evolution of Silicon Nanowires Grown by Chemical Vapor Deposition
  Published in: Advances in Nanomaterials and Processing (p1201)
• New Approaches to In Situ Doping of SiC Epitaxial Layers
  Published in: Advances in Innovative Materials and Applications (p14)