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Articles by keyword: «Vacancy Type Defects»

• Annealing of a Vacancy-Type Defect and Diffusion of Implanted Boron in 6H-SiC
  Published in: Silicon Carbide and Related Materials - 2002 (p633)
• Combined Analysis of the S and W Parameters Obtained from Positron Annihilation Spectra
  Published in: Positron Annihilation - ICPA-12 (p646)
• Defects in Electron or Proton Irradiated Undoped and Si-Doped GaAs by Positron Annihilation
  Published in: Positron Annihilation - ICPA-9 (p1085)
• Fluence Dependence of the Formation of Open-Volume Defects in Silicon After Ion Implantation
  Published in: Positron Annihilation - ICPA-11 (p472)
• Relationship between Donor Activation and Defect Annealing in 6H-SiC Hot-Implanted with Phosphorus Ions
  Published in: Silicon Carbide and Related Materials - 1999 (p857)
• Slow Positron Beam Investigations of Defects Caused by B⁺ Implantation into Epitaxial 6H-SiC
  Published in: Positron Annihilation - ICPA-13 (p36)
• Study of Thermal Annealing of Vacancies in Ion Implanted 3C-SiC by Positron Annihilation
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p745)
• The Estimation of the Vacancy-Type Defects Density in Thin Fe Film with Slow Positron Beam
  Published in: Positron Annihilation - ICPA-12 (p490)
• Vacancy-Type Defects in Si⁺- and B⁺-Implanted Si Probed by a Monoenergetic Positron Beam
  Published in: Positron Annihilation - ICPA-9 (p1479)