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Articles by keyword: «Work Function»

• Application of the High Temperature Fermi Probe in Studies of Charge Transfer at the Gas/Solid Interface. Example of the Oxygen/Zirconia System
  Published in: Ceramic Interfaces: Properties and Applications V (p151)
• Current–Voltage Characteristics of n-Al_0.08In_0.08Ga_0.84N Schottky Diode Using Pt Metal Contact
  Published in: Solid State Science and Technology XXVI (p226)
• Development of FETs and Resistive Devices Based on Epitaxially Grown Single Layer Graphene on SiC for Highly Sensitive Gas Detection
  Published in: Silicon Carbide and Related Materials 2011 (p687)
• Effect of Various Electrode Materials in Non-Volatile Memory Device Using Poly(3,4-Ethylenedioxythiophene):Poly(Styrenesulfonate) (PEDOT:PSS) Thin Films
  Published in: Smart Materials & Micro/Nanosystems (p470)
• Electrical Properties of Metal Oxides at Elevated Temperatures
  Published in: Electrical Properties of Oxide Materials (p1)
• Electronic Surface Properties of Ultrahigh Vacuum Grown Polycrystalline CuGaSe₂
  Published in: Polycrystalline Semiconductors VII (p319)
• Evaluation of Initial Corrosion Phenomenon of Magnesium Alloys by SKPFM
  Published in: Light Metals Technology V (p397)
• Excitation of X-Rays Using Polarized LiNbO₃ Single Crystal
  Published in: Electroceramics in Japan VIII (p205)
• Experimental Determination of Positron Related Surface Characteristics of 6H-SiC
  Published in: Positron Annihilation - ICPA-11 (p711)
• First Principles Study on the Adsorption of Alkali Metal on C(100)( 2×1)
  Published in: Advanced Materials and Processing (p1341)
• Influence of Metal Electrode(Ag,Au,Pt) on the Dielectric and Electrical Properties of HfTaO Capacitors
  Published in: New and Advanced Materials (p1757)
• Measurement of Positronium Emission Energy from Surface of MCP
  Published in: Positron Annihilation - ICPA-12 (p682)
• Novel Full Wafer Inspection Technology for Non-Visual Residue Defects
  Published in: Ultra Clean Processing of Semiconductor Surfaces VIII (p289)
• Reduction of Surface Work Function of Nano-Amorphous Carbon Film due to Hydrogen Chemisorption
  Published in: Nanoscience and Technology (p701)
• RTP Requirements for CMOS Integration of Dual Work Function Phase Controlled Ni-FUSI (Fully Silicided) Gates with Simultaneous Silicidation of nMOS (NiSi) and pMOS (Ni-Rich Silicide) Gates on HfSiON
  Published in: Rapid Thermal Processing and beyond: Applications in Semiconductor Processing (p341)