Papers by Keyword: ZnO Thin Films

Abstract: Undoped nanocrystalline ZnO thin films were deposited onto the glass substrates via the low cost sol-gel dip coating method. The as-grown ZnO films were annealed at the temperatures ranging from 400 °C to 550 °C. The X-ray diffraction (XRD) pattern revealed that the annealed ZnO films were polycrystalline with hexagonal wurtzite structure and majority preferentially grow along (002) c-axis orientation. Atomic force microscopy (AFM) micrographs showed the improvement of RMS roughness and grain size as annealing temperature increased. The ZnO films that annealed at 500 oC exhibited the lowest resistivity value.

Abstract: ZnO thin films with excellent properties have been prepared on glass substrates and quartz substrates by sol-gel process. Structural features, surface morphology and UV absorption spectrum have been studied by XRD, AFM and UV-Vis-Nir scanning spectrophotometer. The influence of different wavelengths of UV irradiation, different substrates and different annealing temperature on photocatalytic performance have been further studied. The results show that the ZnO thin films prepared on quartz substrates, annealing at 400 ^oC has higher degradation rates. The experiments realize the supported catalysts, easy recycling and good catalytic effect.

Abstract: Highly photoactive ZnO thin films on glass substrates and quartz substrates have been prepared by sol-gel process. Structural features, surface morphology and UV absorption spectrum have been studied by XRD, SEM and UV-Vis scanning spectrophotometer. The influence of degradation temperatures, original concentration of phenol and air flux on degradation rates have also been studied. And the results show the best conditions, degradation temperature is between 25^oC and 45 ^oC, air flux is 40ml/min, the lower original concentration, the higher degradation rates. Excellent adhesion as well as recyclable and efficient in phenol degradation of ZnO thin films were found in this experiment.

Abstract: ZnO thin films were deposited on simple glass substrate by sol-gel technique. The structure, morphology and luminescence of the annealed ZnO thin films were characterized by X-ray diffraction (XRD), atomic force microscope (AFM), ultra-violet spectrometer (UVS) and photoluminescence (PL) spectroscopy, respectively. The XRD experiments shows that all of the samples annealed at 300°C, 400°C, 500°C have a hexagonal wurtzite structure. Absorption spectrum shows that all the samples have high transmittance in the visible range and have a strong absorption near the band edge of ZnO. The morphology of the samples studied by the AFM shows an increase in the annealing temperature causes the surface flatter and the grain size larger. The PL spectrum shows obvious peak near 380nm.

Abstract: ZnO thin films were deposited on the glass substrates via the sol-gel dip coating method. The films were annealed at various temperatures ranging from 350 °C to 550 °C. X-ray diffraction (XRD), and atomic force microscopy (AFM) were used to investigate the effect of annealing temperature on the structural and morphology properties of the films. The as grown films exhibited amorphous pattern while annealed films were polycrystalline structure with (002) preferential growth along c-axis orientation. The AFM micrographs revealed that the RMS roughness of the films increased as the annealing temperature increased. The grain size was ranging from 32.1 nm to 176.0 nm as the annealing temperature increased from 350 °C to 450 °C and decreased to 56.1 nm for 550 °C.

Abstract: Zinc oxide (ZnO) thin films were deposited on teflon substrates by RF magnetron sputtering at different substrate temperature. The effect of substrate temperature on ZnO thin films electrical and structural properties were examined using current-voltage (I-V) measurement, and x-ray diffraction (XRD) It was found that the electrical conductivity and resistivity of the ZnO thin film deposited at 40°C was the highest and lowest intensity accordingly. This was supported by the crystalline quality of the films from the x-ray diffraction (XRD) results. The XRD pattern showed that the ZnO thin film deposited at 40°C has the highest intensity with the narrowest full-width-at-half-maximum indicating that the film has the highest quality compared to other thin film.